公开(公告)号：US11063137B2

公开(公告)日：2021-07-13

申请号：US16302698

申请日：2016-06-28

Applicant: Intel Corporation

Inventor： Jui-Yen Lin ,  Chen-Guan Lee ,  Joodong Park ,  Walid M. Hafez ,  Kun-Huan Shih

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/28 ,  H01L21/265

Abstract: An embodiment includes an apparatus comprising: a transistor including a source, a drain, and a gate that has first and second sidewalls; a first spacer on the first sidewall between the drain and the gate; a second spacer on the second sidewall between the source and the gate; and a third spacer on the first spacer. Other embodiments are described herein.

公开(公告)号：US20190123170A1

公开(公告)日：2019-04-25

申请号：US16302698

申请日：2016-06-28

Applicant: Intel Corporation

Inventor： Jui-Yen Lin ,  Chen-Guan Lee ,  Joodong Park ,  Walid M. Hafez ,  Kun-Huan Shih

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/8234 ,  H01L27/088

Abstract: An embodiment includes an apparatus comprising: a transistor including a source, a drain, and a gate that has first and second sidewalls; a first spacer on the first sidewall between the drain and the gate; a second spacer on the second sidewall between the source and the gate; and a third spacer on the first spacer. Other embodiments are described herein.

公开(公告)号：US10229866B2

公开(公告)日：2019-03-12

申请号：US15576364

申请日：2015-06-22

Applicant: INTEL CORPORATION

Inventor： Yi Wei Chen ,  Kinyip Phoa ,  Nidhi Nidhi ,  Jui-Yen Lin ,  Kun-Huan Shih ,  Xiaodong Yang ,  Walid M. Hafez ,  Curtis Tsai

IPC: H01L23/48 ,  H01L29/94 ,  H01L21/768 ,  H01L27/06 ,  H01L49/02 ,  H01L27/12

Abstract: Techniques are disclosed for providing on-chip capacitance using through-body-vias (TBVs). In accordance with some embodiments, a TBV may be formed within a semiconductor layer, and a dielectric layer may be formed between the TBV and the surrounding semiconductor layer. The TBV may serve as one electrode (e.g., anode) of a TBV capacitor, and the dielectric layer may serve as the dielectric body of that TBV capacitor. In some embodiments, the semiconductor layer serves as the other electrode (e.g., cathode) of the TBV capacitor. To that end, in some embodiments, the entire semiconductor layer may comprise a low-resistivity material, whereas in some other embodiments, low-resistivity region(s) may be provided just along the sidewalls local to the TBV, for example, by selective doping in those location(s). In other embodiments, a conductive layer formed between the dielectric layer and the semiconductor layer serves as the other electrode (e.g., cathode) of the TBV capacitor.