公开(公告)号：US20180267826A1

公开(公告)日：2018-09-20

申请号：US15790444

申请日：2017-10-23

Applicant: INTEL CORPORATION

Inventor： Neven M. ABOU GAZALA ,  Paul S. DIEFENBAUGH ,  Nithyananda S. JEGANATHAN ,  Eugene GORBATOV

IPC: G06F9/46 ,  G06F12/0868

Abstract: Examples are disclosed for composing memory resources across devices. In some examples, memory resources associated with executing one or more applications by circuitry at two separate devices may be composed across the two devices. The circuitry may be capable of executing the one or more applications using a two-level memory (2LM) architecture including a near memory and a far memory. In some examples, the near memory may include near memories separately located at the two devices and a far memory located at one of the two devices. The far memory may be used to migrate one or more copies of memory content between the separately located near memories in a manner transparent to an operating system for the first device or the second device. Other examples are described and claimed.