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公开(公告)号:US20220102495A1
公开(公告)日:2022-03-31
申请号:US17032669
申请日:2020-09-25
Applicant: Intel Corporation
Inventor: Kirby Kurtis Maxey , Ashish Verma Penumatcha , Carl Hugo Naylor , Chelsey Jane Dorow , Kevin P. O'Brien , Shriram Shivaraman , Tanay Arun Gosavi , Uygar E. Avci
Abstract: Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.
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公开(公告)号:US20220102499A1
公开(公告)日:2022-03-31
申请号:US17032989
申请日:2020-09-25
Applicant: INTEL CORPORATION
Inventor: Carl Hugo Naylor , Kevin P. O'Brien , Chelsey Jane Dorow , Kirby Kurtis Maxey , Tanay Arun Gosavi , Ashish Verma Penumatcha , Urusa Shahriar Alaan , Uygar E. Avci
IPC: H01L29/10 , H01L27/088 , H01L29/08 , H01L29/24
Abstract: Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.
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