公开(公告)号：US11923010B2

公开(公告)日：2024-03-05

申请号：US16828843

申请日：2020-03-24

Applicant: INTEL NDTM US LLC

Inventor： Arash Hazeghi ,  Pranav Kalavade ,  Rohit S. Shenoy ,  Hsiao-Yu Chang

IPC: G11C16/10 ,  G06F3/06

CPC classification number: G11C16/10 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0679

Abstract: A method is described. The method includes performing the following on a flash memory chip: measuring a temperature of the flash memory chip; and, changing a program step size voltage of the flash memory chip because the temperature of the flash memory chip has changed.