公开(公告)号：US20140174656A1

公开(公告)日：2014-06-26

申请号：US13722170

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Satbir Kahlon ,  Jeffrey Lowe

IPC: B05C11/00

CPC classification number: H01L21/67017 ,  H01L21/67086

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Apparatuses include a wet etch module (WEM) operable to combinatorially etch a substrate having at least two site-isolated regions. The WEM includes a dispense manifold operable to dispense fluids and a mixing vessel unit operable to mix fluids. The WEM further includes a reactor unit operable to receive fluids from the dispense manifold or the mixing vessel unit. The reactor unit can apply a combinatorial process on a substrate having at least two site-isolated regions within the WEM. In addition, a secondary containment unit, having a leak sensor therein, is coupled to the dispense manifold, mixing vessel unit, or reactor unit to receive fluid leaks within the system. When the leak sensor detects a fluid leak, a warning may be generated. Advantageously, the generated warning does not impede substrate processing within the WEM.

Abstract translation: 公开了用于组合处理的方法和装置。 设备包括湿蚀刻模块（WEM），其可操作以组合蚀刻具有至少两个位置隔离区域的衬底。 WEM包括可分配流体的分配歧管和可操作以混合流体的混合容器单元。 WEM还包括可操作以从分配歧管或混合容器单元接收流体的反应器单元。 反应器单元可以在WEM中具有至少两个位置隔离区域的基底上施加组合方法。 此外，在其中具有泄漏传感器的辅助容纳单元联接到分配歧管，混合容器单元或反应器单元以接收系统内的流体泄漏。 当泄漏传感器检测到液体泄漏时，可能会产生警告。 有利地，产生的警告不妨碍WEM内的衬底处理。

公开(公告)号：US20160304815A1

公开(公告)日：2016-10-20

申请号：US15132480

申请日：2016-04-19

Applicant: Intermolecular, Inc. ,  Samsung Electronics Co., Ltd.

Inventor： Jeffrey Lowe ,  Kim Van Berkel ,  Jae-Hyuck Choi

IPC: C11D3/30 ,  B08B3/10 ,  C11D3/28 ,  B08B3/08 ,  G03F1/82 ,  G03F1/22

CPC classification number: C11D3/30 ,  C11D3/28 ,  C11D3/32 ,  G03F1/82 ,  G03F7/425

Abstract: Embodiments provided herein describe methods and chemical solutions for cleaning photomasks. A photomask is provided. The photomask is exposed to a chemical solution. The chemical solution includes a quaternary ammonium hydroxide.The quaternary ammonium hydroxide may include at least one of tetraethyl ammonium hydroxide (TEAH), tetrapropyl ammonium hydroxide (TPAH), or a combination thereof. The photomask may be an extreme ultraviolet (EUV) lithography photomask.

Abstract translation: 季铵氢氧化物可以包括四乙基氢氧化铵（TEAH），四丙基氢氧化铵（TPAH）或其组合中的至少一种。 光掩模可以是极紫外（EUV）光刻光掩模。