SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH
    1.
    发明申请
    SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH 有权
    具有非常数PITCH的次平面半导体结构

    公开(公告)号:US20140110817A1

    公开(公告)日:2014-04-24

    申请号:US13659318

    申请日:2012-10-24

    Abstract: Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.

    Abstract translation: 公开了使用双材料侧壁图像转印掩模制造翅片结构以实现亚光刻特征图案化的翅片结构和方法。 形成多个翅片的方法包括形成具有第一间距的第一组翅片。 该方法还包括形成与第一组翅片相邻的翅片。 相邻翅片和第一组翅片的最近的翅片具有比第一节距大的第二节距。 第一组翅片和相邻翅片是使用侧壁图像转移过程形成的亚光刻特征。

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