公开(公告)号：US20140127878A1

公开(公告)日：2014-05-08

申请号：US13667384

申请日：2012-11-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORP

Inventor： Solomon Assefa ,  William M. Green ,  Marwan H. Khater ,  Yurri A. Vlasov

IPC: H01L21/762

CPC classification number: H01L21/76205 ,  H01L21/0274 ,  H01L21/76232 ,  H01L21/76281 ,  H01L21/76283

Abstract: Photonic devices are created by laterally growing a semiconductor material (i.e., a localized semiconductor-on-insulator layer) over a localized buried oxide (BOX) created in a semiconductor by either a trench isolation process or thermal oxidation. In one embodiment, and after trench formation in a semiconductor substrate, the trench is filled with oxide to create a localized BOX. The top surface of the BOX is recessed to depth below the topmost surface of the semiconductor substrate to expose sidewall surfaces of the semiconductor substrate within each trench. A semiconductor material is then epitaxially grown from the exposed sidewall surfaces of the semiconductor substrate.

Abstract translation: 通过在半导体中通过沟槽隔离工艺或热氧化产生的局部掩埋氧化物（BOX）横向生长半导体材料（即，局部绝缘体上半导体层）来产生光子器件。 在一个实施例中，并且在半导体衬底中形成沟槽之后，沟槽填充有氧化物以产生局部BOX。 BOX的顶表面凹进到半导体衬底的最上表面的深度以暴露在每个沟槽内的半导体衬底的侧壁表面。 然后从半导体衬底的暴露的侧壁表面外延生长半导体材料。