公开(公告)号：US20150130064A1

公开(公告)日：2015-05-14

申请号：US14601296

申请日：2015-01-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Felix P. ANDERSON ,  Steven P. BARKYOUMB ,  Edward C. COONEY, III ,  Thomas L. MCDEVITT ,  William J. MURPHY ,  David C. STRIPPE

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/53209 ,  C23C14/02 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.