公开(公告)号：US20130153378A1

公开(公告)日：2013-06-20

申请号：US13768235

申请日：2013-02-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Felix P. ANDERSON ,  Thomas L. MCDEVITT ,  Anthony K. STAMPER

IPC: H01H59/00 ,  G06F17/50

CPC classification number: H01H59/00 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00182 ,  B81C2201/0107 ,  G06F17/5068

Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.

Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一配线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。

公开(公告)号：US20150130064A1

公开(公告)日：2015-05-14

申请号：US14601296

申请日：2015-01-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Felix P. ANDERSON ,  Steven P. BARKYOUMB ,  Edward C. COONEY, III ,  Thomas L. MCDEVITT ,  William J. MURPHY ,  David C. STRIPPE

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/53209 ,  C23C14/02 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.

公开(公告)号：US20140014480A1

公开(公告)日：2014-01-16

申请号：US14027768

申请日：2013-09-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Felix P. ANDERSON ,  Edward C. COONEY, III ,  Thomas L. MCDEVITT ,  Anthony K. STAMPER

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void.

Abstract translation: 本文提供垂直集成MEMS开关，制造这种垂直开关的设计结构和方法。 制造MEMS开关的方法包括在晶片中形成至少两个垂直延伸的通孔，并用金属填充至少两个垂直延伸的通孔以形成至少两个垂直延伸的导线。 该方法还包括从底侧打开晶片中的空隙，使得垂直延伸的线中的至少一个可在空隙内移动。