公开(公告)号：US20150035112A1

公开(公告)日：2015-02-05

申请号：US14520648

申请日：2014-10-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Robert L. BARRY ,  Phillip F. CHAPMAN ,  Jeffrey P. GAMBINO ,  Michael L. GAUTSCH ,  Mark D. JAFFE ,  Kevin N. OGG ,  Bradley A. ORNER

IPC: H01L29/06 ,  G06F17/50

CPC classification number: H01L21/76267 ,  G06F17/5045 ,  H01L21/76224 ,  H01L23/3171 ,  H01L23/562 ,  H01L23/585 ,  H01L23/66 ,  H01L29/0619 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are guard ring structures with an electrically insulated gap in a substrate to reduce or eliminate device coupling of integrated circuit chips, methods of manufacture and design structures. The method includes forming a guard ring structure comprising a plurality of metal layers within dielectric layers. The method further includes forming diffusion regions to electrically insulate a gap in a substrate formed by segmented portions of the guard ring structure.

Abstract translation: 公开了一种在衬底中具有电绝缘间隙的保护环结构，以减少或消除集成电路芯片的器件耦合，制造方法和设计结构。 该方法包括在电介质层内形成包括多个金属层的保护环结构。 该方法还包括形成扩散区域以使由保护环结构的分段部分形成的衬底中的间隙电绝缘。