公开(公告)号：US20190355865A1

公开(公告)日：2019-11-21

申请号：US16531649

申请日：2019-08-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  H01L31/028 ,  G02B6/12 ,  H01L31/103 ,  H01L31/0232

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20190139819A1

公开(公告)日：2019-05-09

申请号：US16240304

申请日：2019-01-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mark D. JAFFE ,  Alvin J. JOSEPH ,  Qizhi LIU ,  Anthony K. STAMPER

IPC: H01L21/762 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/764 ,  H01L21/02 ,  H01L21/306 ,  H01L21/265 ,  H01L21/266 ,  H01L21/027

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

公开(公告)号：US20150244345A1

公开(公告)日：2015-08-27

申请号：US14700744

申请日：2015-04-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Robert K. LEIDY ,  Anthony K. STAMPER

IPC: H03H9/54 ,  H03H9/17

CPC classification number: H03H9/545 ,  H03H9/0547 ,  H03H9/171 ,  H03H9/173 ,  H03H9/56 ,  H03H2009/02204 ,  Y10T29/42

Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

Abstract translation: 公开了可调谐滤波器结构，制造方法和设计结构。 形成滤波器结构的方法包括在空腔结构上形成压电谐振滤波器。 压电谐振滤波器的形成包括：在压电材料的一侧上形成上电极; 以及在所述压电材料的相对侧上形成下电极。 该方法还包括在致动时与压电谐振滤波器接触的位置处形成微机电结构（MEMS）悬臂梁。

公开(公告)号：US20150115270A1

公开(公告)日：2015-04-30

申请号：US14068461

申请日：2013-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  William J. MURPHY ,  Kirk D. PETERSON ,  Steven M. SHANK

IPC: H01L31/0203 ,  H01L31/20

CPC classification number: H01L31/0203 ,  H01L31/1872 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521

Abstract: An encapsulated sensors and methods of manufacture are disclosed herein. The method includes forming an amorphous or polycrystalline material in contact with a layer of seed material. The method further includes forming an expansion space for the amorphous or polycrystalline material. The method further includes forming an encapsulation structure about the amorphous or polycrystalline material. The method further includes crystallizing the amorphous or polycrystalline material by a thermal anneal process such that the amorphous or polycrystalline material expands within the expansion space.

Abstract translation: 封装的传感器和制造方法在本文中公开。 该方法包括形成与种子材料层接触的无定形或多晶材料。 该方法还包括形成用于非晶或多晶材料的膨胀空间。 该方法还包括形成关于非晶或多晶材料的封装结构。 该方法还包括通过热退火工艺使非晶或多晶材料结晶，使得非晶或多晶材料在膨胀空间内膨胀。

公开(公告)号：US20150035112A1

公开(公告)日：2015-02-05

申请号：US14520648

申请日：2014-10-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Robert L. BARRY ,  Phillip F. CHAPMAN ,  Jeffrey P. GAMBINO ,  Michael L. GAUTSCH ,  Mark D. JAFFE ,  Kevin N. OGG ,  Bradley A. ORNER

IPC: H01L29/06 ,  G06F17/50

CPC classification number: H01L21/76267 ,  G06F17/5045 ,  H01L21/76224 ,  H01L23/3171 ,  H01L23/562 ,  H01L23/585 ,  H01L23/66 ,  H01L29/0619 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are guard ring structures with an electrically insulated gap in a substrate to reduce or eliminate device coupling of integrated circuit chips, methods of manufacture and design structures. The method includes forming a guard ring structure comprising a plurality of metal layers within dielectric layers. The method further includes forming diffusion regions to electrically insulate a gap in a substrate formed by segmented portions of the guard ring structure.

Abstract translation: 公开了一种在衬底中具有电绝缘间隙的保护环结构，以减少或消除集成电路芯片的器件耦合，制造方法和设计结构。 该方法包括在电介质层内形成包括多个金属层的保护环结构。 该方法还包括形成扩散区域以使由保护环结构的分段部分形成的衬底中的间隙电绝缘。

公开(公告)号：US20180269348A1

公开(公告)日：2018-09-20

申请号：US15981191

申请日：2018-05-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01P1/17 ,  H01P3/16 ,  H01L31/02

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20170125627A1

公开(公告)日：2017-05-04

申请号：US15408012

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/103 ,  H01L31/0232 ,  H01L31/028

CPC classification number: H01L31/1872 ,  G02B6/12 ,  G02B6/12004 ,  H01L31/02005 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1864 ,  H01L2223/6627 ,  H01P1/172 ,  H01P3/16 ,  Y02E10/50

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20160093523A1

公开(公告)日：2016-03-31

申请号：US14963530

申请日：2015-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mark D. JAFFE ,  Alvin J. JOSEPH ,  Qizhi LIU ,  Anthony K. STAMPER

IPC: H01L21/764

CPC classification number: H01L21/76289 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0273 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66772 ,  H01L29/78

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

Abstract translation: 公开了具有下面的气隙的场效应晶体管（FET）和制造方法。 该方法包括在衬底的预定深度处形成非晶层。 该方法还包括在非晶层下方的衬底中形成气隙。 该方法还包括在非晶层和气隙之上的衬底的有源区中形成完全隔离的晶体管。

公开(公告)号：US20150372660A1

公开(公告)日：2015-12-24

申请号：US14840834

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H9/64 ,  G06F17/50 ,  H03H9/54

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

Abstract translation: 本文公开了可切换和/或可调滤波器，制造方法和设计结构。 形成滤波器的方法包括形成至少一个压电滤波器结构，其包括形成为与至少一个压电基板接触的多个电极。 该方法还包括形成包括MEMS光束的微电子机械结构（MEMS），其中，在致动时，MEMS光束将通过交替与压电基板接触的电极或者将 电极之间的至少一个压电基板。

公开(公告)号：US20190386168A1

公开(公告)日：2019-12-19

申请号：US16552664

申请日：2019-08-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  H01L31/103 ,  H01L31/028 ,  H01L31/0232 ,  G02B6/12

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.