公开(公告)号：US20020197839A1

公开(公告)日：2002-12-26

申请号：US09888160

申请日：2001-06-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Omer H. Dokumaci ,  Bruce B. Doris ,  Peter Smeys ,  Isabel Y. Yang

IPC分类号： H01L021/8238 ,  H01L021/336 ,  H01L021/3205 ,  H01L021/4763

CPC分类号： H01L21/82345

摘要： A method for improving the gate activation of metal oxide semiconductor field effect transistor (MOSFET) structures are provided. The method of the present invention includes the steps of forming a plurality of patterned gate stacks atop a layer of gate dielectric material; forming a first planarizing organic film on the gate dielectric material and abutting vertical sidewalls of the patterned gate stacks, said planarizing organic film not being present on top, horizontal surfaces of each of the patterned gate stacks; blocking some of the plurality of patterned gate stacks with a first resist, while leaving other patterned gate stacks of said plurality unblocked; implanting first ions into the unblocked patterned gate stacks; removing the first resist and first planarizing organic film and forming a second planarizing organic film and blocking the previously unblocked patterned gate stacks with a second resist; implanting second ions into the patterned gate stacks that are not blocked by said second resist; and removing the second resist and the second planarizing organic film.

摘要翻译： 提供了一种用于改善金属氧化物半导体场效应晶体管（MOSFET）结构的栅激活的方法。 本发明的方法包括以下步骤：在栅极电介质材料层的上方形成多个图案化的栅叠层; 在所述栅极电介质材料上形成第一平面化有机膜并邻接所述图案化栅极叠层的垂直侧壁，所述平面化有机膜不存在于每个所述图案化栅极堆叠的顶部水平表面上; 用第一抗蚀剂阻挡多个图案化栅极堆叠中的一些，同时留下所述多个未封装的其它图案化栅极堆叠; 将第一离子注入未封闭的图案化栅极堆叠中; 去除第一抗蚀剂和第一平面化有机膜并形成第二平面化有机膜并用第二抗蚀剂阻挡先前未封闭的图案化栅叠层; 将第二离子注入未被所述第二抗蚀剂阻挡的图案化栅极堆叠中; 并除去第二抗蚀剂和第二平面化有机膜。

公开(公告)号：US20020113291A1

公开(公告)日：2002-08-22

申请号：US09788077

申请日：2001-02-16

申请人： International Business Machines Corporation

发明人： James W. Adkisson ,  Edward Maciejewski ,  Peter Smeys ,  Anthony K. Stamper

IPC分类号： H01H085/04

CPC分类号： H01L23/5329 ,  H01L23/3735 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： Thermal degradation of a low-k organic dielectric material is avoided or limited in the proximity of a heat source such as a fusible element by overlaying the low-k material with a thermally conductive material and providing a low thermal resistance path from the thermally conductive material, possibly having a low modulus of elasticity, to a heat sink. The thermally conductive material thus provides crack-stop protection for further layers of an integrated circuit or interconnect structure above the fusible element by mechanical, chemical and thermal encapsulation of the heat source and low-k material.

摘要翻译： 通过用导热材料覆盖低k材料并且从导热材料提供低热阻路径来避免或限制诸如可熔元件的热源附近的低k有机介电材料的热降解 ，可能具有低的弹性模量。 因此，导热材料通过热源和低k材料的机械，化学和热封装为可熔元件上方的集成电路或互连结构的其他层提供了裂纹停止保护。

公开(公告)号：US20040029352A1

公开(公告)日：2004-02-12

申请号：US10214510

申请日：2002-08-07

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Klaus D. Beyer ,  Patricia A. O'Neil ,  Deborah A. Ryan ,  Peter Smeys ,  Effendi Leobandung

IPC分类号： H01L021/76

CPC分类号： H01L21/76264 ,  H01L21/76283

摘要： In an integrated circuit process for SOI including trench device isolation, the problem of voids in the trench fill is addressed by a triple fill process, in which a thermal oxide sidewall having recesses at the bottom corners is covered with a LPCVD deposition that fills in the recesses, followed by a void-free HDP deposition. Densification results in substantially the same etch rate for the three types of oxide.