公开(公告)号：US10578572B2

公开(公告)日：2020-03-03

申请号：US15000729

申请日：2016-01-19

Applicant: INVENSENSE, INC.

Inventor： Fang Liu ,  Jim Salvia ,  Zhineng Zhu ,  Michael Perrott

IPC: G01N27/04 ,  G01N27/14 ,  H01L23/34 ,  G01N27/12

Abstract: A gas sensor device with temperature uniformity is presented herein. In an implementation, a device includes a complementary metal-oxide semiconductor (CMOS) substrate layer, a dielectric layer and a gas sensing layer. The dielectric layer is deposited on the CMOS substrate layer. Furthermore, the dielectric layer includes a temperature sensor and a heating element coupled to a heat transfer layer associated with a set of metal interconnections. The gas sensing layer is deposited on the dielectric layer.

公开(公告)号：US20170205368A1

公开(公告)日：2017-07-20

申请号：US15000729

申请日：2016-01-19

Applicant: INVENSENSE, INC.

Inventor： Fang Liu ,  Jim Salvia ,  Zhineng Zhu ,  Michael Perrott

IPC: G01N27/14 ,  H01L23/34

Abstract: A gas sensor device with temperature uniformity is presented herein. In an implementation, a device includes a complementary metal-oxide semiconductor (CMOS) substrate layer, a dielectric layer and a gas sensing layer. The dielectric layer is deposited on the CMOS substrate layer. Furthermore, the dielectric layer includes a temperature sensor and a heating element coupled to a heat transfer layer associated with a set of metal interconnections. The gas sensing layer is deposited on the dielectric layer.