Method of chemical mechanical polishing of a copper structure using a slurry having a multifunctional activator
    3.
    发明申请
    Method of chemical mechanical polishing of a copper structure using a slurry having a multifunctional activator 审中-公开
    使用具有多官能活化剂的浆料对铜结构进行化学机械抛光的方法

    公开(公告)号:US20080257862A1

    公开(公告)日:2008-10-23

    申请号:US12166765

    申请日:2008-07-02

    IPC分类号: C23F1/02 B44C1/22

    摘要: The present invention relates to aqueous slurry/solution compositions for the Chemical Mechanical Polishing/Planarization (“CMP”) of substrates. In particular, the novel slurries/solutions of the present invention contain a multifunctional activator which provides increased copper removal rate to the aqueous polishing slurry/solution while suppressing isotropic chemical etch and dishing of copper lines.

    摘要翻译: 本发明涉及用于基材的化学机械抛光/平面化(“CMP”)的含水浆料/溶液组合物。 特别地,本发明的新型浆液/溶液含有一种多功能活化剂,其在抑制铜线的各向同性化学蚀刻和凹陷的同时,对水性抛光浆料/溶液提供增加的铜去除速率。