公开(公告)号：US12084780B2

公开(公告)日：2024-09-10

申请号：US16147918

申请日：2018-10-01

申请人： TECHNOCHIM SA

发明人： Groulard Frédéric ,  François Tosar ,  Juliette Louche

IPC分类号： C23G1/08 ,  B08B3/08 ,  B08B3/10 ,  B08B17/00 ,  C09K13/00 ,  C09K13/02 ,  C09K13/12 ,  C23F3/06

CPC分类号： C23F3/06 ,  B08B3/08 ,  B08B3/10 ,  B08B17/00 ,  C09K13/00 ,  C09K13/02 ,  C09K13/12 ,  C23G1/08 ,  B08B2203/007

摘要： The present invention is in the field of chemical cleaning and surface treatments for a stainless steel substrate. In particular, the present invention provides a method, kit and use of specific solutions for removing and preferably preventing the formation of rouging (e.g. class I, II and/or III) on a stainless steel substrate, which may be used as processing station or production unit.

公开(公告)号：US09984895B1

公开(公告)日：2018-05-29

申请号：US15815276

申请日：2017-11-16

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Lin-Chen Ho ,  Wei-Wen Tsai ,  Cheng-Ping Lee

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/321 ,  C23F3/06 ,  H01L21/3105 ,  C09G1/02

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/06 ,  H01L21/31053

摘要： A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a dihydroxy bis-sulfide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

公开(公告)号：US20170298522A1

公开(公告)日：2017-10-19

申请号：US15516019

申请日：2015-09-30

申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

发明人： Liang HONG ,  Yuanhuan ZHENG ,  Siok Wei TAY

IPC分类号： C23F3/06 ,  F16L9/02 ,  C09K13/08 ,  F16L58/00 ,  C09K13/06

CPC分类号： C23F3/06 ,  C09K13/06 ,  C09K13/08 ,  C10G9/16 ,  C10G75/02 ,  F16L9/02 ,  F16L58/00

摘要： There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ions from the metal substrate, at least one sequestering agent having a ligand capable of forming a complex with the free metal ions and at least one chelating agent having a ligand capable of complexing with at least one surface metal atom.

公开(公告)号：US09771496B2

公开(公告)日：2017-09-26

申请号：US14924997

申请日：2015-10-28

申请人： Cabot Microelectronics Corporation

发明人： Kevin Dockery ,  Helin Huang ,  Lin Fu ,  Tina Li

IPC分类号： C09G1/02 ,  B24B37/24 ,  C23F3/04

CPC分类号： C09G1/02 ,  B24B37/24 ,  C23F3/04 ,  C23F3/06

摘要： Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

公开(公告)号：US09163314B2

公开(公告)日：2015-10-20

申请号：US13643375

申请日：2012-07-06

申请人： Jea-Gun Park ,  Jin-Hyung Park ,  Jae-Hyung Lim ,  Jong-Young Cho ,  Ho Choi ,  Hee-Sub Hwang

发明人： Jea-Gun Park ,  Jin-Hyung Park ,  Jae-Hyung Lim ,  Jong-Young Cho ,  Ho Choi ,  Hee-Sub Hwang

IPC分类号： C09K3/14 ,  C09G1/02 ,  C23F1/30 ,  C23F3/06

CPC分类号： C23F1/30 ,  C09G1/02 ,  C23F3/06

摘要： The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

摘要翻译： 本发明涉及一种用于抛光钨的CMP浆料组合物，其包括研磨剂和抛光化学品，其中磨料包含分散在超纯水中的胶体二氧化硅，抛光化学品包括过氧化氢，过硫酸铵和硝酸铁。 浆料组合物不变色并且具有良好的蚀刻选择性，从而适用于CMP工艺。

公开(公告)号：US20150267307A1

公开(公告)日：2015-09-24

申请号：US14729431

申请日：2015-06-03

申请人： Henkel AG & Co. KGaA

发明人： Valentino Gasparetto ,  Mauro Rigamonti ,  Paolo Giordani ,  Stefano Sfolcini

IPC分类号： C23F3/03 ,  C23F1/28

CPC分类号： C23F3/03 ,  C09G1/04 ,  C23C22/34 ,  C23F1/28 ,  C23F3/06 ,  C23G1/086

摘要： This invention relates to a composition for the brightening and/or passivating of stainless steel after pickling. The invention is based on the discovery that the presence of organic compounds containing multiple hydroxyl groups with at least 3, but not more than 8 carbon atoms as a further ingredient of passivating and brightening solution significantly increases the desmutting performance of pickled stainless steel surfaces. The compositions of the invention are especially useful for the passivating and brightening of stainless steel grades being alloyed with sulfur. The invention thus further encompasses a passivating and brightening process for pickled stainless steel surfaces wherein the stainless steel is alloyed with at least 0.10 at.-% of sulfur.

摘要翻译： 本发明涉及酸洗后不锈钢的增白和/或钝化的组合物。 本发明基于以下发现：含有多个具有至少3个但不超过8个碳原子的羟基的有机化合物作为钝化和增亮溶液的另一成分的发现显着增加了酸洗的不锈钢表面的去污性能。 本发明的组合物对于与硫合金化的不锈钢等级的钝化和增亮是特别有用的。 因此，本发明进一步包括用于酸洗的不锈钢表面的钝化和增亮方法，其中不锈钢与至少0.10％（重量）的硫合金化。

公开(公告)号：US08900477B2

公开(公告)日：2014-12-02

申请号：US12015533

申请日：2008-01-17

申请人： Takeshi Uchida ,  Tetsuya Hoshino ,  Hiroki Terazaki ,  Yasuo Kamigata ,  Naoyuki Koyama ,  Yoshio Honma ,  Seiichi Kondoh

发明人： Takeshi Uchida ,  Tetsuya Hoshino ,  Hiroki Terazaki ,  Yasuo Kamigata ,  Naoyuki Koyama ,  Yoshio Honma ,  Seiichi Kondoh

IPC分类号： C09K13/00 ,  C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/321 ,  C09G1/04 ,  C09G1/02 ,  C23F3/06 ,  C23F3/00 ,  C23F3/04

CPC分类号： C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  C23F3/00 ,  C23F3/04 ,  C23F3/06 ,  H01L21/3212

摘要： Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

摘要翻译： 提供一种金属抛光液体，其包含氧化剂，氧化金属蚀刻剂，保护膜形成剂，保护膜形成剂的溶解促进剂和水; 一种生产它的方法; 和使用它的抛光方法。 还提供了金属抛光液的材料，其包括氧化金属蚀刻剂，保护膜形成剂和用于保护膜形成剂的溶解促进剂。

公开(公告)号：US20130313225A1

公开(公告)日：2013-11-28

申请号：US13477535

申请日：2012-05-22

申请人： Wiechang Jin ,  John Parker ,  Elizabeth Remsen

发明人： Wiechang Jin ,  John Parker ,  Elizabeth Remsen

IPC分类号： C09K13/06 ,  C23F1/18 ,  C09K13/00 ,  B44C1/22

CPC分类号： C23F3/06 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/32125

摘要： The invention provides a chemical-mechanical polishing composition containing zirconia particles, a modifying agent that adheres to the zirconia particles, an organic acid, and water, as well as a method of using such a polishing composition to polish substrates and a method of using a polishing composition comprising zirconia particles, an organic acid, an oxidizing agent, and water to polishing substrates containing metal and oxide-based dielectric materials.

摘要翻译： 本发明提供一种包含氧化锆颗粒，粘附于氧化锆颗粒的改性剂，有机酸和水的化学机械抛光组合物，以及使用这种抛光组合物抛光底物的方法和使用 包含氧化锆颗粒，有机酸，氧化剂和水的抛光组合物以研磨含有金属和氧化物基介电材料的基材。

公开(公告)号：US08486837B2

公开(公告)日：2013-07-16

申请号：US12318376

申请日：2008-12-29

申请人： Hiroshi Ono ,  Katsuyuki Masuda ,  Masanobu Habiro

发明人： Hiroshi Ono ,  Katsuyuki Masuda ,  Masanobu Habiro

IPC分类号： H01L21/00 ,  H01L21/02019 ,  H01L21/02247 ,  H01L21/30 ,  C11D11/0047 ,  C11D3/3945

CPC分类号： B24B37/00 ,  B24B37/04 ,  B24B37/044 ,  C09G1/02 ,  C23F1/42 ,  C23F3/00 ,  C23F3/06 ,  H01L21/3212

摘要： A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.

公开(公告)号：US20120048830A1

公开(公告)日：2012-03-01

申请号：US13218590

申请日：2011-08-26

申请人： Takeshi Uchida ,  Jun Matsuzawa ,  Tetsuya Hoshino ,  Yasuo Kamigata ,  Hiroki Terazaki ,  Yoshio Honma ,  Seiichi Kondoh

发明人： Takeshi Uchida ,  Jun Matsuzawa ,  Tetsuya Hoshino ,  Yasuo Kamigata ,  Hiroki Terazaki ,  Yoshio Honma ,  Seiichi Kondoh

IPC分类号： C23F1/16 ,  C23F1/00

CPC分类号： C09G1/02 ,  C23F3/00 ,  C23F3/06 ,  H01L21/3212

摘要： An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms a chemical bond, to thereby form a protecting film, (4) a second protecting film-forming agent such as polyacrylic acid, polyamido acid or a salt thereof which assists the first protecting film-forming agent in forming a protecting film and (5) water; and a method for polishing.

摘要翻译： 一种用于金属的研磨液，包括（1）金属氧化剂，（2）氧化金属的溶解剂，（3）第一保护膜形成剂，例如氨基酸或唑，物理上吸附 金属的表面和/或形成化学键，从而形成保护膜，（4）辅助第一保护膜形成剂的第二保护膜形成剂如聚丙烯酸，聚酰胺或其盐 形成保护膜和（5）水; 和抛光方法。