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    PHOTODIODE FOR DETECTION WITHIN MOLECULAR DIAGNOSTICS
    3.
    发明申请
    PHOTODIODE FOR DETECTION WITHIN MOLECULAR DIAGNOSTICS 失效
    用于在分子诊断中检测的光致抗体

    公开(公告)号：US20090250630A1

    公开(公告)日：2009-10-08

    申请号：US12374000

    申请日：2007-07-05

    申请人： Pieter Jan Van Der Zaag ,  Ian French ,  Nigel David Young

    发明人： Pieter Jan Van Der Zaag ,  Ian French ,  Nigel David Young

    IPC分类号： G01N21/64 ,  G01J1/58 ,  H01L31/105

    CPC分类号： H01L31/1055 ,  G01N21/6428 ,  H01L31/103

    摘要： A photodiode (200), for instance a PN or a PIN photodiode, is disclosed. The photodiode receives incident radiation having first and second spectral distributions, where the first spectral distribution is spectrally shifted from the second spectral distribution. The photodiode has a first semiconductor layer (211) capable of absorbing incident radiation (231) having a first spectral distribution without generating a photocurrent, while simultaneously transmitting incident radiation having a second spectral distribution to the intrinsic layer (212) for generating a photocurrent (213). The photodiode may be used in connection with detecting the presence of target molecules that has been labeled with labeling agents, such as fluorophores or quantum dots. The labeling agents are characterized by the Stokes shift and, therefore, they emit fluorescent radiation having the second spectral distribution that is spectrally shifted from the illumination radiation having the first spectral distribution.

    摘要翻译： 公开了一种光电二极管（200），例如PN或PIN光电二极管。 光电二极管接收具有第一和第二光谱分布的入射辐射，其中第一光谱分布从第二光谱分布光谱偏移。 光电二极管具有能够吸收具有第一光谱分布而不产生光电流的入射辐射（231）的第一半导体层（211），同时将具有第二光谱分布的入射辐射传输到本征层（212）以产生光电流 213）。 光电二极管可用于检测已经用标记试剂如荧光团或量子点标记的靶分子的存在。 标记试剂的特征在于斯托克斯位移，因此，它们发射具有与具有第一光谱分布的照射辐射光谱偏移的第二光谱分布的荧光辐射。

    Mask and manufacturing method using mask
    6.
    发明申请
    Mask and manufacturing method using mask 审中-公开
    面膜和制作方法使用面膜

    公开(公告)号：US20060051974A1

    公开(公告)日：2006-03-09

    申请号：US10519650

    申请日：2003-06-13

    申请人： Ian French ,  James Hewett

    发明人： Ian French ,  James Hewett

    IPC分类号： H01L21/31

    CPC分类号： G03F1/32 ,  G03F1/54

    摘要： A mask 12 includes half-tone layer 16 and light blocking layer 20. The half-tone layer 16 is of silicon rich silicon nitride SiNx:H. x may be in the range 0 to 1, preferably 0.2 to 0.6, so that the optical band gap can be in the range 2.1 eV to 2.5 eV. It has been discovered that photoresist removal when the mask 12 is used is very dependent on the band gap, and not too dependent on the thickness, so good control of TFT manufacture can be obtained.

    摘要翻译： 掩模12包括半色调层16和遮光层20.半色调层16是富硅氮化硅SiN x：H。 x可以在0至1的范围内，优选为0.2至0.6，使得光学带隙可以在2.1eV至2.5eV的范围内。 已经发现，当使用掩模12时光致抗蚀剂的去除非常依赖于带隙，并且不太依赖于厚度，因此可以获得TFT制造的良好控制。

    VERTICAL HEAT TREATMENT SYSTEM
    8.
    发明申请
    VERTICAL HEAT TREATMENT SYSTEM 审中-公开
    垂直热处理系统

    公开(公告)号：US20080236779A1

    公开(公告)日：2008-10-02

    申请号：US12056359

    申请日：2008-03-27

    申请人： Scott P. Crafton ,  Paul M. Crafton ,  Ian French ,  Volker Knobloch

    发明人： Scott P. Crafton ,  Paul M. Crafton ,  Ian French ,  Volker Knobloch

    IPC分类号： B22D45/00 ,  B22D19/00

    CPC分类号： B22D47/00 ,  B22D45/00 ,  B22D47/02 ,  C21D9/0006 ,  C21D9/005 ,  F27B9/16 ,  F27B9/243

    摘要： A system and method for forming and heat treating metal castings is provided with a vertical heat treatment unit positioned adjacent and downstream from a pouring station at which a series of molds are filled with a molten metal to form the castings. The vertical heat treatment unit includes a vertically oriented furnace chamber in which the castings are received, and which has a reduced footprint to reduce the manufacturing floor space required for the vertical heat treatment unit, and to enable the vertical heat treatment unit to be positioned in close proximity to the pouring station.

    摘要翻译： 一种用于形成和热处理金属铸件的系统和方法设置有垂直热处理单元，其位于浇注站的邻近和下游，在该浇注站处，一系列模具填充有熔融金属以形成铸件。 垂直热处理单元包括垂直定向的炉室，其中容纳有铸件，并且其具有减小的占地面积以减少垂直热处理单元所需的制造占地空间，并且使垂直热处理单元能够定位在 靠近浇注站。