SHEAR STRESS SENSORS
    1.
    发明申请
    SHEAR STRESS SENSORS 有权
    剪应变传感器

    公开(公告)号:US20100242592A1

    公开(公告)日:2010-09-30

    申请号:US12739520

    申请日:2008-10-24

    IPC分类号: G01F1/692 C03C15/00

    摘要: This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten.

    摘要翻译: 本发明涉及热膜剪切应力传感器及其制造。 我们描述了一种热膜剪切应力传感器,其包括支撑具有下面空腔的膜的硅衬底,所述膜承载金属膜并具有用于加热所述膜的电触点,并且其中所述膜包括氧化硅膜,其中在所述金属 包括铝或钨,并且其中所述膜在所述金属膜上具有硅基材料的保护层。 在优选实施例中,传感器通过CMOS工艺制造,并且金属包括铝或钨。

    Shear stress sensors
    2.
    发明授权
    Shear stress sensors 有权
    剪切应力传感器

    公开(公告)号:US09080907B2

    公开(公告)日:2015-07-14

    申请号:US12739520

    申请日:2008-10-24

    摘要: This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten.

    摘要翻译: 本发明涉及热膜剪切应力传感器及其制造。 我们描述了一种热膜剪切应力传感器,其包括支撑具有下面空腔的膜的硅衬底,所述膜承载金属膜并具有用于加热所述膜的电触点,并且其中所述膜包括氧化硅膜,其中在所述金属 包括铝或钨,并且其中所述膜在所述金属膜上具有硅基材料的保护层。 在优选实施例中,传感器通过CMOS工艺制造,并且金属包括铝或钨。