摘要:
This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten.
摘要:
This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten.
摘要:
A fixture in which an attractive magnetic force is utilized to join two parts of a container or housing together is discussed. The fixture comprises a fixture body portion, a fixture base portion and a removable fixture plate portion. At least one body magnet resides within the fixture body portion and at least one plate magnet resides within the removable fixture plate. The fixture body and plate magnets are positioned such that when they are brought together, an attractive magnetic force pulls the plate towards the fixture body. Therefore, when the respective housing portions are positioned within the fixture, the magnetic force compresses the housing portions together.
摘要:
Semiconductor devices and methods for fabricating semiconductor devices are provided. In an embodiment, a method for fabricating a semiconductor device includes forming on a semiconductor surface a temporary gate structure including a polysilicon gate and a cap. A spacer is formed around the temporary gate structure. The cap and a portion of the spacer are removed. A uniform liner is deposited overlying the polysilicon gate. The method removes a portion of the uniform liner overlying the polysilicon gate and the polysilicon gate to form a gate trench. Then, a replacement metal gate is formed in the gate trench.
摘要:
An apparatus includes a battery pack, processor attached to the battery pack, and an antenna attached to the processor for establishing a radio link with an electronic device powered by the batter pack.
摘要:
An apparatus includes a cantilevered element including a coating material having an affinity for at least one compound. The apparatus further includes a first capacitive plate and a second capacitive plate that are each spaced from and capacitively coupled to the cantilevered element. The first capacitive plate is configured to induce a vibration in the cantilevered element at a frequency related to a mass of the cantilevered element. A frequency detector is coupled to the second capacitive plate to detect a change in vibrational frequency of the cantilevered element as a result of at least one particle of the at least one compound coupling to the coating material.
摘要:
An apparatus is provided that includes a processor mounted on a battery pack and a communication pathway from the processor to an electronic device comprising power battery contacts. The apparatus also includes an antenna mounted on the battery pack and coupled to the processor and adapted to transmit and receive data. A method is provided that includes installing an integrated chip including a processor and an antenna on a battery pack. The method also includes coupling the integrated chip and an electronic device when the battery pack is installed in the electronic device using power battery contacts. A high frequency signal superimposed on a direct current carried through the power battery contacts operates to send data between the processor and the electronic device.
摘要:
Semiconductor devices and methods for fabricating semiconductor devices are provided. In an embodiment, a method for fabricating a semiconductor device includes forming on a semiconductor surface a temporary gate structure including a polysilicon gate and a cap. A spacer is formed around the temporary gate structure. The cap and a portion of the spacer are removed. A uniform liner is deposited overlying the polysilicon gate. The method removes a portion of the uniform liner overlying the polysilicon gate and the polysilicon gate to form a gate trench. Then, a replacement metal gate is formed in the gate trench.
摘要:
Disclosed herein are food and flavorant compositions comprising 1,3-propanediol, wherein the 1,3-propanediol in said compositions has a bio-based carbon content of about 1% to 100%. In addition, it is preferred that the 1,3-propanediol be biologically-derived, and wherein upon biodegradation, the biologically-derived 1,3-propanediol contributes no anthropogenic CO2 emissions to the atmosphere.
摘要:
Disclosed are systems, methods and computer-readable media for providing a pass to access multimedia services in a limited geographical area serviced by a fiber-fed, star-topology network (FFSTN). The method comprises receiving pre-registration information from a user to authorize one or more computing devices to obtain access to the fiber-fed, star-topology network covering a limited geographical area for a limited time, presenting the user with a plurality of customizable services each associated with capabilities of the respective one or more computing devices to access the FFSTN, and upon authorization, granting access to requested customized services for each of the one or more computing devices. Mechanisms are provided for handing off one or more devices as they travel from a first FFSTN to a second FFSTN.