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1.发明授权
公开(公告)号：US5208606A
公开(公告)日：1993-05-04
申请号：US795596
申请日：1991-11-21
CPC分类号： B41J2/1606
摘要： A thermal ink jet printhead has an outer, metallic hydrophobic coating on its front face to repel ink. Eliminating the accumulation of ink at the nozzles of the printhead allows an ink droplet to be accurately ejected and ensures the directionality of the ejected ink droplet onto the printing medium. The outer coating is formed of a metal selected from the group of noble metals, including gold, platinum, palladium, silver, rhodium and ruthenium. An adhesion layer is preferably deposited between the front face of the printhead and the outer ink-repellent coating. The metallic coating is preferably applied by electroplating, wet electroless plating, evaporation, sputtering, ion plating, CVD or plasma CVD.
摘要翻译： 热喷墨打印头在其前面具有外部金属疏水涂层以排斥油墨。 在打印头的喷嘴处消除墨水的积聚允许墨滴被精确地喷射并确保喷射的墨滴在打印介质上的方向性。 外涂层由选自贵金属，包括金，铂，钯，银，铑和钌的金属形成。 粘合层优选沉积在打印头的前表面和外部防墨涂层之间。 金属涂层优选通过电镀，湿化学镀，蒸发，溅射，离子镀，CVD或等离子体CVD来进行。
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公开(公告)号：US5448273A
公开(公告)日：1995-09-05
申请号：US80631
申请日：1993-06-22
申请人： Igal E. Klein , Cathie J. Burke , Roberto E. Proano , Renato P. Apollonio , Robert V. Lorenze , Daniel O. Roll
发明人： Igal E. Klein , Cathie J. Burke , Roberto E. Proano , Renato P. Apollonio , Robert V. Lorenze , Daniel O. Roll
CPC分类号： B41J2/14129 , B41J2202/03 , Y10T428/12951
摘要： In a thermal ink jet printhead with a protective layer, the protective layer is made of a thin film material having a melting point not less than about 1000.degree. C. A deposition process for preparing the thin film material produces a thin film material having, at an operating temperature for the thermal ink jet printer, a thermal conductivity coefficient not less than about 10 W/m.K, a compressive yield strength not less than about 1400 MPa, and a compressive residual stress of not greater than about 1200 MPa. The protective layer is smooth, substantially free of pores and impervious to stress corrosion or hydrogen stress cracking at a hydrogen uptake rate of less than about 5 ppm. The protective layer may also contain an adhesion enhancing region between the protective layer and an underlying layer or an anodic region contiguous with an underlying thin film material of the protective layer. The adhesion enhancing region is a reaction product between an ambient gas and the thin film material of the protective layer and extends only to the grain boundaries of the protective layer. The contiguous anodic region is substantially free of pores, has a homogeneous composition, protects an underlying thin film material against corrosive species and hydrogen and is formed by anodization of the underlying thin film in an aqueous electrolytic process.
摘要翻译： 在具有保护层的热喷墨打印头中，保护层由熔点不低于约1000℃的薄膜材料制成。用于制备薄膜材料的沉积工艺产生薄膜材料，其具有 用于热喷墨打印机的工作温度，不低于约10W / mK的导热系数，不低于约1400MPa的压缩屈服强度和不大于约1200MPa的压缩残余应力。 保护层是光滑的，基本上没有孔隙，并且在小于约5ppm的吸氢速率下不受应力腐蚀或氢应力开裂的影响。 保护层还可以在保护层和下层之间包含粘合增强区域，或者与保护层的下面的薄膜材料邻接的阳极区域。 附着增强区域是环境气体与保护层的薄膜材料之间的反应产物，仅延伸到保护层的晶界。 连续的阳极区域基本上没有孔隙，具有均匀的组成，保护下面的薄膜材料免受腐蚀物质和氢气的侵害，并通过在水性电解过程中阳极氧化底层薄膜形成。
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公开(公告)号：US5639386A
公开(公告)日：1997-06-17
申请号：US400638
申请日：1995-03-07
CPC分类号： B41J2/14129 , B41J2/1604 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1646
摘要： The resistors of heater elements are formed by chemical vapor deposition of polycrystalline silicon at at least one of a flat temperature profile of 620.degree. C. and a ramped temperature profile of 620.degree. C. to 640.degree. C. in a first embodiment. Such method of forming the polysilicon result in a predominantly uniform grain size of approximately 1000 .ANG., where grain size can vary between 200 .ANG. to 1000 .ANG.. Alternatively, the resistors are formed by chemical vapor deposition of amorphous polysilicon at at least one of a flat temperature profile at a temperature below 580.degree. C. and a ramped temperature profile of 565.degree. C. to 575.degree. C. In the alternative embodiment, the polysilicon has a grain size of at least 1000 .ANG.. During the ion implantation of either p-type or n-type dopants into the polysilicon, a flood gun located in an ion implanter emits low energy electrons to neutralize the build-up of positive charges on the polysilicon surface. Because the low energy electrons prevent the build-up of electric charges on the surface of the polysilicon, the usual build-up of an electrical field on the surface of the polysilicon is eliminated, and the polysilicon can be uniformly doped by ion implantation of dopants. By using the flood gun during the fabrication of the heater elements of the printhead, the resistors of the heater elements and printheads have substantially uniform sheet resistances relative to each other. The sheet resistances of the resistors in the printhead vary less than 3% and preferably less than 1%. Such low variations in sheet resistance prevent undervoltage and overvoltage from being applied to the resistors and extend the lifetime of the heater element and thus, the printhead.
摘要翻译： 加热器元件的电阻器通过在620℃的平坦温度分布和620℃至640℃的升温温度分布中的至少一个上的多晶硅的化学气相沉积形成。在第一实施例中。 这种形成多晶硅的方法导致大致均匀的晶粒尺寸约为1000，其中晶粒尺寸可以在200至1000之间变化。 或者，电阻器通过在低于580℃的温度曲线和565℃至575℃的升温温度分布中的至少一个下的非晶多晶硅的化学气相沉积形成。在替代实施例中， 多晶硅的晶粒尺寸至少为1000安培。 在将p型或n型掺杂剂离子注入多晶硅期间，位于离子注入机中的喷枪发射低能电子以中和多晶硅表面上正电荷的积聚。 因为低能电子阻止了多晶硅表面上的电荷的积聚，消除了在多晶硅表面上电场的通常积累，并且可以通过掺杂剂的离子注入均匀地掺杂多晶硅 。 通过在制造打印头的加热元件期间使用喷枪，加热器元件和打印头的电阻器相对于彼此具有基本均匀的薄片电阻。 打印头中的电阻器的薄层电阻变化小于3％，优选小于1％。 薄层电阻的这种低的变化防止欠电压和过压被施加到电阻器并延长加热器元件的寿命并因此延长打印头。
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公开(公告)号：US5096535A
公开(公告)日：1992-03-17
申请号：US631519
申请日：1990-12-21
IPC分类号： B41J2/16 , H01L21/306
CPC分类号： B41J2/1635 , B41J2/1604 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1645 , H01L21/30608
摘要： In semiconductor technologies such as thermal ink jet printhead fabrication, there exists a need for the precise placement of channels in a substrate. Due to errors in plane alignment in semiconductor substrates, channel structures tend to widen dimensions, thus lowering precision. A one-step anisotropic etching process is disclosed for accurately making channel structures, as well as reservoir structures. Channel structures are formed by segmenting the channel, such that during the anisotropic etching, thin walls between the segments break down before the completion of the etch. Widening of channels is greatly reduced, thus increasing precision. During such a one-step process, larger structures, such as a reservoir, can be formed during the same step.
摘要翻译： 在诸如热喷墨打印头制造的半导体技术中，需要在衬底中精确地放置通道。 由于半导体衬底中的平面对准错误，通道结构趋向于扩大尺寸，从而降低精度。 公开了一步法各向异性蚀刻工艺，用于准确地制造通道结构以及储层结构。 通道结构是通过对通道进行分段而形成的，使得在各向异性蚀刻期间，段之间的薄壁在蚀刻完成之前分解。 渠道扩大大大减少，精度提高。 在这样的一步法中，可以在相同的步骤中形成更大的结构，例如储存器。
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