公开(公告)号：US4042450A

公开(公告)日：1977-08-16

申请号：US422925

申请日：1973-12-07

申请人： Igor Danilovich Voitovich ,  Maxim Timofeevich Kostyshin ,  Ekaterina Vasilievna Mikhailovskaya ,  Vyacheslav Vasilievich Petrov ,  Petr Fedorovich Romanenko ,  Vladimir Petrovich Skuridin

发明人： Igor Danilovich Voitovich ,  Maxim Timofeevich Kostyshin ,  Ekaterina Vasilievna Mikhailovskaya ,  Vyacheslav Vasilievich Petrov ,  Petr Fedorovich Romanenko ,  Vladimir Petrovich Skuridin

IPC分类号： C23F1/02 ,  G03C1/705 ,  G03F7/004 ,  H01L21/00 ,  H01L21/314 ,  H01L49/02 ,  H05K3/06

CPC分类号： H05K3/067 ,  C23F1/02 ,  G03C1/705 ,  G03F7/0042 ,  H01L21/00 ,  H01L21/314 ,  H01L49/02 ,  H05K3/062 ,  H05K2201/0175 ,  H05K2203/1142

摘要： A method for the production of films having the desired geometrical form (configuration) comprising depositing an electromagnetic radiation-sensitive system, which consists of a metal layer and an inorganic compound layer capable of reacting with said metal layer and forming interaction products under the effect of electromagnetic radiation, onto a film made from a material which does not react, on being irradiated, with the layer of said system that adjoins said film; subjecting said system to selective irradiation in conformity to the desired configuration, followed by carrying out the selective etching of the irradiated system so as to obtain the requisite configuration, and thereafter using said etched system as a mask for etching selectively said film in order to impart thereto the sought-for geometrical form.

摘要翻译： 一种用于生产具有所需几何形状（构型）的膜的方法，包括沉积电磁辐射敏感系统，该系统由金属层和能够与所述金属层反应形成相互作用产物的金属层和无机化合物层组成， 电磁辐射照射到与所述膜相邻的所述系统层的由不反应的材料制成的膜上; 对所述系统进行选择性照射，按照所需的结构进行选择性蚀刻，然后对所照射的系统进行选择性蚀刻，以获得必要的结构，然后使用所述蚀刻系统作为掩模以选择性地蚀刻所述膜以赋予 寻求寻求的几何形式。