公开(公告)号：US20230167548A1

公开(公告)日：2023-06-01

申请号：US17538760

申请日：2021-11-30

Applicant: Illinois Institute of Technology

Inventor： Adam Hock ,  Michael James Foody

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/40

CPC classification number: C23C16/45527 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  C23C16/40

Abstract: The present disclosure describes a method of a thermal atomic layer deposition (ALD) process of depositing a ternary gallium oxide thin film, which includes gallium, a metal element other than gallium, and oxygen. The disclosed method starts with providing a reactive surface. Next, one or more ALD growth cycles are conducted. Each ALD growth cycle includes one or more first ALD sub-cycles and one or more second ALD sub-cycles. Herein, conducting each first ALD sub-cycles includes applying a pulse of a first metal precursor and a pulse of water sequentially, where the first metal precursor is a gallium compound. Conducting each second ALD sub-cycles includes applying a pulse of a second metal precursor and a pulse of water sequentially, where the second metal precursor includes the metal element other than gallium.