摘要:
Disclosed are a plug interlock device for a circuit breaker and a circuit breaker having the same, wherein a plug is not allowed to be separated from a connector while a breaker main body is moved from a test position to a run position or is running at the run position, thereby obviating the plug from being unexpectedly unplugged from the connector while the breaker main body is moved from the test position to the run position or is running, resulting in preventing a safety accident in advance.
摘要:
Disclosed are a plug interlock device for a circuit breaker and a circuit breaker having the same, wherein a plug is not allowed to be separated from a connector while a breaker main body is moved from a test position to a run position or is running at the run position, thereby obviating the plug from being unexpectedly unplugged from the connector while the breaker main body is moved from the test position to the run position or is running, resulting in preventing a safety accident in advance.
摘要:
Disclosed are a position switch and a circuit breaker having the same. As contact plates having an elastically variable height are provided between switch blocks and switch levers, each of a testing contact plate and a running contact plate may compensate for inferior dimensioning of the switch blocks and the switch levers. This may allow a position of a breaker body to be rapidly and precisely displayed, and may prevent damage of the position switch provided at the breaker body. Furthermore, connection inferiority between a terminal of the breaker body and a terminal of a cradle may be prevented.
摘要:
A position switch and a circuit breaker having a position switch are provided. Contact plates, each having an elastically variable height, may be provided between switch blocks and switch levers. A testing contact plate and a running contact plate may compensate for inferior dimensioning of the switch blocks and the switch levers. Such a configuration may allow a position of a breaker body to be quickly and accurately displayed and, further, may prevent damage of the position switch provided at the breaker body. Furthermore, such a configuration may prevent any connection inferiority between a terminal of the breaker body and a terminal of a cradle.
摘要:
A circuit breaker having a cradle, the circuit breaker comprises: an upper shutter and a lower shutter configured to open and close terminals of the cradle; an upper shutter operation link having one end connected to the upper shutter and another end rotatably coupled to a pivot; a lower shutter operation link having one end connected to the lower shutter and another end rotatably coupled to the pivot; and a shutter safety device comprising a coupling unit fixedly-coupled to the pivot, a rotation unit rotatably coupled to the coupling unit, and a link fixing unit provided at one end of the rotation unit, wherein the link fixing unit is to restrict rotation of the upper shutter operation link and the lower shutter operation link in a contacting manner.
摘要:
Disclosed are a magnesium mother alloy, a manufacturing method thereof, a metal alloy using the same, and a method of manufacturing the metal alloy. In particular, there are provided a magnesium mother alloy with improved oxidation and ignition properties, and a manufacturing method thereof, and also provided a metal alloy with low cost that is suitable for design purposes using the magnesium mother alloy, and a method of manufacturing the metal alloy. The magnesium mother alloy includes a plurality of magnesium grains, and scandium dissolved in the magnesium grains, or a scandium compound crystallized at grain boundaries which are not inside but outside the magnesium grains. Also, the metal alloy suitable for design purposes is manufactured at low cost by adding the magnesium mother alloy containing scandium into a magnesium alloy or an aluminum alloy.
摘要:
Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus.