摘要:
The present invention relates to a switch, a negative resistance cell, and a differential voltage controlled oscillator using the same. The present invention includes a first signal line provided in a first direction, a second signal line provided in parallel with the first signal line, and first to fourth gate electrodes, first to third source electrodes, and first to fourth drain electrodes formed between the first signal line and the second signal line, and provides a switch having electrodes in the order of the first gate electrode, the first drain electrode, the second gate electrode, the first source electrode, the third gate electrode, the second drain electrode, the fourth gate electrode, the second source electrode, the fifth gate electrode, the third drain electrode, the sixth gate electrode, the third source electrode, the seventh gate electrode, the fourth drain electrode, and the eighth gate electrode. According to the present invention, a differential voltage controlled oscillator for RF oscillation operation in the broadband area is realized by minimizing generation of parasitic components.
摘要:
A charge pumping circuit is provided to regulate the amount of charge to be pumped according to a driving voltage to reduce the loss of power and increase charge pumping efficiency. The charge pumping circuit includes: a driving voltage sensing unit sensing a driving voltage to generate one or more sensing signals for determining the amount of charge to be pumped; a multi-level clock generation unit generating a pair of clock signals each having an amplitude corresponding to a signal value of each of the one or more sensing signals; and a charge pumping unit charging the pair of clock signals to generate a charged voltage, adding the charged voltage to the driving voltage, and outputting the same.
摘要:
Provided is a frequency conversion mixer. The frequency conversion mixer includes a transconductance stage, a switching stage, a load stage, a current bleeding circuit, and a bias stage. The transconductance stage receives an RF signal, and outputs a current corresponding to a voltage of the RF signal. The switching stage switches the current which is outputted from the transconductance stage in response to a local oscillation signal, for frequency conversion the RF signal into an intermediate frequency (IF) signal. The load stage is connected between the switching stage and a supply voltage terminal. The current bleeding circuit is connected parallel with the switching stage, especially, embodying inverter structure with transconductance stage to get not only current bleeding effect but also current reuse effect, and one resonant inductor for reducing noise which is generated in parasitic capacitance at node between transconductance stage and switching stage. The bias stage is connected between the transconductance stage and a ground terminal, and has the switched biasing technique for allowing not only the stable bias current but also lowering the flicker noise.