公开(公告)号：US08422275B2

公开(公告)日：2013-04-16

申请号：US12372492

申请日：2009-02-17

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US07821820B2

公开(公告)日：2010-10-26

申请号：US12372587

申请日：2009-02-17

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

摘要翻译： 磁性随机存取存储器（MRAM）装置的示例性实施例包括具有自由层的磁性隧道结，具有覆盖自由层的表面的第一部分的第一电极（第一磁场产生装置）和电力 源极经由覆盖小于第一电极的第一部分的一半的连接而连接到第一电极。 MRAM器件的另一个示例性实施例包括磁性隧道结，直接连接到磁性隧道结相对侧上的磁性隧道结的第一和第二电极（第一和第二磁场产生装置）和具有一个极点的电源 经由第一连接器连接到第一电极，并且具有通过第二连接连接到第二电极的第二极，其中第一和第二连接部从第一和第二电极与磁性隧道结之间的连接侧向偏移。 还公开了操作和制造这些磁性随机存取存储器的方法。

公开(公告)号：US20060139992A1

公开(公告)日：2006-06-29

申请号：US11164579

申请日：2005-11-29

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US07639771B2

公开(公告)日：2009-12-29

申请号：US11363244

申请日：2006-02-28

申请人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

发明人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ) cell, a transistor, and a bit line, and a magnetic field generator external to the magnetic memory to generate a global magnetic field toward the magnetic memory in a parallel direction to the bit line.

摘要翻译： 具有磁场发生器的存储器件及其操作和制造方法。 在该装置和方法中，磁存储器可以包括磁隧道结（MTJ）单元，晶体管和位线，以及磁存储器外部的磁场发生器，以在磁存储器中产生朝向磁存储器的全局磁场 与位线并联的方向。

公开(公告)号：US20090154230A1

公开(公告)日：2009-06-18

申请号：US12372587

申请日：2009-02-17

申请人： In-jun HWANG ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun HWANG ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/14 ,  G11C5/14

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US07508699B2

公开(公告)日：2009-03-24

申请号：US11164579

申请日：2005-11-29

申请人： In-Jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-Jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

摘要翻译： 磁性随机存取存储器（MRAM）装置的示例性实施例包括具有自由层的磁性隧道结，具有覆盖自由层的表面的第一部分的第一电极（第一磁场产生装置）和电力 源极经由覆盖小于第一电极的第一部分的一半的连接而连接到第一电极。 MRAM器件的另一个示例性实施例包括磁性隧道结，直接连接到磁性隧道结相对侧上的磁性隧道结的第一和第二电极（第一和第二磁场产生装置）和具有一个极点的电源 经由第一连接器连接到第一电极，并且具有通过第二连接连接到第二电极的第二极，其中第一和第二连接部从第一和第二电极与磁性隧道结之间的连接侧向偏移。 还公开了操作和制造这些磁性随机存取存储器的方法。

公开(公告)号：US20060198182A1

公开(公告)日：2006-09-07

申请号：US11363244

申请日：2006-02-28

申请人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

发明人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ) cell, a transistor, and a bit line, and a magnetic field generator external to the magnetic memory to generate a global magnetic field toward the magnetic memory in a parallel direction to the bit line.