公开(公告)号：US07639771B2

公开(公告)日：2009-12-29

申请号：US11363244

申请日：2006-02-28

申请人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

发明人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ) cell, a transistor, and a bit line, and a magnetic field generator external to the magnetic memory to generate a global magnetic field toward the magnetic memory in a parallel direction to the bit line.

摘要翻译： 具有磁场发生器的存储器件及其操作和制造方法。 在该装置和方法中，磁存储器可以包括磁隧道结（MTJ）单元，晶体管和位线，以及磁存储器外部的磁场发生器，以在磁存储器中产生朝向磁存储器的全局磁场 与位线并联的方向。

公开(公告)号：US20060198182A1

公开(公告)日：2006-09-07

申请号：US11363244

申请日：2006-02-28

申请人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

发明人： Tae-wan Kim ,  In-jun Hwang ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/228

摘要： A memory device with a magnetic field generator and method of operating and manufacturing the same. In the device and method, a magnetic memory may includes a magnetic tunneling junction (MTJ) cell, a transistor, and a bit line, and a magnetic field generator external to the magnetic memory to generate a global magnetic field toward the magnetic memory in a parallel direction to the bit line.

公开(公告)号：US20060139992A1

公开(公告)日：2006-06-29

申请号：US11164579

申请日：2005-11-29

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US07821820B2

公开(公告)日：2010-10-26

申请号：US12372587

申请日：2009-02-17

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

摘要翻译： 磁性随机存取存储器（MRAM）装置的示例性实施例包括具有自由层的磁性隧道结，具有覆盖自由层的表面的第一部分的第一电极（第一磁场产生装置）和电力 源极经由覆盖小于第一电极的第一部分的一半的连接而连接到第一电极。 MRAM器件的另一个示例性实施例包括磁性隧道结，直接连接到磁性隧道结相对侧上的磁性隧道结的第一和第二电极（第一和第二磁场产生装置）和具有一个极点的电源 经由第一连接器连接到第一电极，并且具有通过第二连接连接到第二电极的第二极，其中第一和第二连接部从第一和第二电极与磁性隧道结之间的连接侧向偏移。 还公开了操作和制造这些磁性随机存取存储器的方法。

公开(公告)号：US08422275B2

公开(公告)日：2013-04-16

申请号：US12372492

申请日：2009-02-17

申请人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun Hwang ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

公开(公告)号：US07751223B2

公开(公告)日：2010-07-06

申请号：US11707002

申请日：2007-02-16

申请人： Tae-wan Kim ,  Kee-won Kim ,  Young-jin Cho ,  In-jun Hwang

发明人： Tae-wan Kim ,  Kee-won Kim ,  Young-jin Cho ,  In-jun Hwang

IPC分类号： G11C19/00

CPC分类号： G11C11/16 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/77

摘要： A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.

摘要翻译： 磁存储器件包括记录层，参考层，第一输入部分和第二输入部分。 记录层具有垂直磁化方向和多个磁畴，并且参考层对应于记录层的一部分并具有钉扎磁化方向。 记录层具有数据存储单元，其中形成各自包括磁畴的多个数据位区域。 磁畴对应于参考层的有效尺寸。 第一输入部分输入写入信号和读取信号中的至少一个。 第二输入部分电连接到记录层并输入磁畴运动信号，以便将存储在记录层的数据位区域中的数据移动到相邻的数据位区域。

公开(公告)号：US07738278B2

公开(公告)日：2010-06-15

申请号：US11706988

申请日：2007-02-16

申请人： Tae-wan Kim ,  Young-jin Cho ,  Kee-won Kim ,  In-jun Hwang

发明人： Tae-wan Kim ,  Young-jin Cho ,  Kee-won Kim ,  In-jun Hwang

IPC分类号： G11C19/00

CPC分类号： G11C11/15 ,  G11C19/0808 ,  G11C19/0841

摘要： A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.

摘要翻译： 提供磁存储器件。 磁存储器件可以包括其中形成多个磁畴的存储器轨道，使得其中每一个可以是磁畴的数据位被存储在阵列中。 存储器轨道可以由非晶软磁材料形成。

公开(公告)号：US20080009080A1

公开(公告)日：2008-01-10

申请号：US11898762

申请日：2007-09-14

申请人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

发明人： Tae-wan Kim ,  Wan-jun Park ,  Sang-jin Park ,  In-jun Hwang ,  Soon-ju Kwon ,  Young-keun Kim ,  Richard Gambino

IPC分类号： H01L21/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

摘要翻译： 提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。 多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜 当上下磁性膜具有相反的磁化方向时。

公开(公告)号：US20050174834A1

公开(公告)日：2005-08-11

申请号：US10987185

申请日：2004-11-15

申请人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

发明人： Tae-wan Kim ,  Sang-jin Park ,  In-jun Hwang

IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01F10/13 ,  H01F10/32 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/135 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetic tunneling junction (MTJ) cell includes a free magnetic layer having a low magnetic moment, and a magnetic random access memory (MRAM) includes the MTJ cell. The MTJ cell of the MRAM includes a lower electrode, a lower magnetic layer, a tunneling layer, an upper magnetic layer and an upper electrode, which are sequentially stacked on the lower electrode. The upper magnetic layer includes a free magnetic layer having a thickness of about 5 nm or less. The MTJ cell may have an aspect ratio of about 2 or less, and the free magnetic layer may have a magnetic moment of about 800 emu/cm3 or less.

摘要翻译： 磁性隧道结（MTJ）单元包括具有低磁矩的自由磁性层，磁性随机存取存储器（MRAM）包括MTJ单元。 MRAM的MTJ单元包括依次堆叠在下电极上的下电极，下磁层，隧道层，上磁层和上电极。 上磁性层包括厚度约5nm以下的自由磁性层。 MTJ单元可以具有约2或更小的纵横比，并且自由磁性层可具有约800emu / cm 3以下的磁矩。

公开(公告)号：US08339728B2

公开(公告)日：2012-12-25

申请号：US11708352

申请日：2007-02-21

申请人： Kee-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-jun Hwang

发明人： Kee-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-jun Hwang

IPC分类号： G11C29/00

CPC分类号： G11C11/16 ,  G11C19/0808

摘要： Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.

摘要翻译： 示例性实施例可以提供磁存储器装置。 示例性实施例磁存储器件可以包括多个存储器轨道，位线，连接器，第一输入部分和/或选择器。 存储器轨道可以堆叠在衬底上以形成多堆叠。 可以在存储器轨道中形成多个磁畴，使得数据位可以由磁畴表示并且可以存储在阵列中。 位线可以沿着各个存储器轨道形成。 连接器可以形成具有存储器轨道的一个数据位区域的磁性隧道结（MTJ）单元。 第一输入部分可以电连接到每个存储器轨道，并且可以输入磁畴运动信号以将存储在存储器轨道的数据位区域上的数据移动到相邻的数据位区域。 选择器可以从其上可以执行读取和/或写入操作的多个存储器轨道中选择存储器轨道。