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    MICRO ELECTRO MECHANICAL SYSTEM (MEMS) BASED WIDE-BAND POLYMER PHOTO-DETECTOR
    1.
    发明申请
    MICRO ELECTRO MECHANICAL SYSTEM (MEMS) BASED WIDE-BAND POLYMER PHOTO-DETECTOR 有权
    微电子机械系统（MEMS）基于宽带聚合物光电探测器

    公开(公告)号：US20160211475A1

    公开(公告)日：2016-07-21

    申请号：US14980540

    申请日：2015-12-28

    Applicant: Indian Institute of Technology Bombay

    Inventor： Sangita Chaki Roy ,  Tapanendu Kundu ,  V. Ramgopal Rao

    IPC: H01L51/42 ,  H01L51/00 ,  H01L51/44

    CPC classification number: H01L51/4206 ,  H01L51/002 ,  H01L51/004 ,  Y02E10/549

    Abstract: A polymer based photo-detector has photoresponsivity in Ultraviolet, Visible, Near and Mid Infrared regions. The photo-detector comprises a single layer of polyvinyl alcohol (PVA) as a photoactive layer; with no additional buffer layer for accepting Ultraviolet, Visible and Infrared radiation as well as no buffer layer to block charge carrier injection. The PVA layer's photoresponsivity is extended from Ultraviolet to Near Infrared by changing its nano-morphology on a low thermal device structure. The primarily photo-generated charge carriers diffuse through the amorphous part of the polymer layer and split into charge carriers on the electrodes or by the charge traps in the layer. The charge carrier generation is in the picosecond range; thus the exciton and Polaron drift diffusion cause electrical conduction of the polymer layer under Ultraviolet illumination. The low thermal mass of the MEMS based structure reduces localized heating effect due to Infrared radiation, increasing responsivity of the photo-detector.

    Abstract translation: 基于聚合物的光电检测器在紫外线，可见光，近红外区域和中红外区域具有光响应性。 光检测器包括单层聚乙烯醇（PVA）作为光敏层; 没有附加的缓冲层用于接受紫外线，可见和红外辐射，以及没有缓冲层阻止电荷载体注入。 PVA层的光响应性从紫外线延伸到近红外线，通过在低热器件结构上改变其纳米形态。 主要的光电荷载流子扩散通过聚合物层的无定形部分并分裂成电极上的电荷载体或层中的电荷陷阱。 电荷载体产生在皮秒范围内; 因此激子和Polaron漂移扩散在紫外线照射下引起聚合物层的电传导。 基于MEMS的结构的低热质量减少了由于红外辐射引起的局部加热效应，从而提高了光检测器的响应度。

    Micro electro mechanical system (MEMS) based wide-band polymer photo-detector
    3.
    发明授权
    Micro electro mechanical system (MEMS) based wide-band polymer photo-detector 有权

    公开(公告)号：US09786855B2

    公开(公告)日：2017-10-10

    申请号：US14980540

    申请日：2015-12-28

    Applicant: Indian Institute of Technology Bombay

    Inventor： Sangita Chaki Roy ,  Tapanendu Kundu ,  V. Ramgopal Rao

    IPC: H01L51/42 ,  H01L51/00

    CPC classification number: H01L51/4206 ,  H01L51/002 ,  H01L51/004 ,  Y02E10/549

    Abstract: A polymer based photo-detector has photoresponsivity in Ultraviolet, Visible, Near and Mid Infrared regions. The photo-detector comprises a single layer of polyvinyl alcohol (PVA) as a photoactive layer; with no additional buffer layer for accepting Ultraviolet, Visible and Infrared radiation as well as no buffer layer to block charge carrier injection. The PVA layer's photoresponsivity is extended from Ultraviolet to Near Infrared by changing its nano-morphology on a low thermal device structure. The primarily photo-generated charge carriers diffuse through the amorphous part of the polymer layer and split into charge carriers on the electrodes or by the charge traps in the layer. The charge carrier generation is in the picosecond range; thus the exciton and Polaron drift diffusion cause electrical conduction of the polymer layer under Ultraviolet illumination. The low thermal mass of the MEMS based structure reduces localized heating effect due to Infrared radiation, increasing responsivity of the photo-detector.

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