公开(公告)号：US12265189B2

公开(公告)日：2025-04-01

申请号：US18148092

申请日：2022-12-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Jen-An Chen ,  Yung-Liang Tung

IPC: G01T1/20 ,  C23C18/12

Abstract: The present disclosure provides a radiation detector, including a substrate, a pixel array formed on the substrate, a perovskite thick film formed on the pixel array and having a cubic crystal phase, a first electrode formed on the perovskite thick film and is opposite to the pixel array, and a readout circuit. The radiation detector has significantly reduced dark current density and high sensing sensitivity. The present disclosure also provides a method for preparing the perovskite thick film.

公开(公告)号：US11271157B1

公开(公告)日：2022-03-08

申请号：US17035681

申请日：2020-09-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Jen-An Chen ,  Pei-Ting Chiu ,  Yu-Hung Chen

IPC: H01L51/00 ,  B05D3/06 ,  B05D3/02 ,  H01L51/42

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1)  formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

公开(公告)号：US20230102199A1

公开(公告)日：2023-03-30

申请号：US17574140

申请日：2022-01-12

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ting Chiu ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Kuo-Wei Huang ,  Jung-Pin Chiou ,  Jen-An Chen ,  Qiao-Zhi Guan

IPC: H01G9/00 ,  C01G21/16 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42

Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.

公开(公告)号：US20220069221A1

公开(公告)日：2022-03-03

申请号：US17035681

申请日：2020-09-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Jen-An Chen ,  Pei-Ting Chiu ,  Yu-Hung Chen

IPC: H01L51/00 ,  B05D3/06 ,  H01L51/42 ,  B05D3/02

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1)  formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

公开(公告)号：US20130144069A1

公开(公告)日：2013-06-06

申请号：US13754561

申请日：2013-01-30

Applicant: Industrial Technology Research Institute

Inventor： Yung-Liang Tung ,  Jia-Yin Wu ,  Jen-An Chen ,  Hsin-Yi Hsu ,  Chun-Guey Wu ,  Min-Fong Jhong ,  Song-Yeu Tsai

IPC: H01L51/00 ,  C07D495/02 ,  H01L31/00

CPC classification number: H01L51/0074 ,  C07D495/04 ,  C07D495/14 ,  C07D519/00 ,  Y02E10/542

Abstract: Organic dyes and photoelectric conversion devices are provided. The Organic dye has the structure represented by formula (I) wherein i is an integer of 0-2; j is an integer of 0-2, and the sum of i and j is an integer of 1-4; X is independently selected from the group consisting of and and R3 is independent and comprise hydrogen, halogen, nitro group, amino group, C1-18 alkyl group, C1-18 alkoxy group, C1-18 sulfanyl group, C3-18 heteroalkyl group, C3-20 aryl group, C3-20 heteroaryl group, C3-20 cycloaliphatic group or C3-20 cycloalkyl group.

Abstract translation: 提供有机染料和光电转换装置。 有机染料具有由式（I）表示的结构，其中i是0-2的整数; j是0-2的整数，i和j的和是1-4的整数; X独立地选自并且R 3是独立的，并且包含氢，卤素，硝基，氨基，C 1-18烷基，C 1-18烷氧基，C 1-18硫烷基，C 3-18杂烷基， C 3-20芳基，C 3-20杂芳基，C 3-20脂环族基或C 3-20环烷基。