公开(公告)号：US20220069221A1

公开(公告)日：2022-03-03

申请号：US17035681

申请日：2020-09-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Jen-An Chen ,  Pei-Ting Chiu ,  Yu-Hung Chen

IPC: H01L51/00 ,  B05D3/06 ,  H01L51/42 ,  B05D3/02

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1)  formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

公开(公告)号：US11271157B1

公开(公告)日：2022-03-08

申请号：US17035681

申请日：2020-09-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Jen-An Chen ,  Pei-Ting Chiu ,  Yu-Hung Chen

IPC: H01L51/00 ,  B05D3/06 ,  B05D3/02 ,  H01L51/42

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1)  formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.