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    Semiconductor device structure, method for manufacturing the same and pixel structure using the same
    1.
    发明授权
    Semiconductor device structure, method for manufacturing the same and pixel structure using the same 有权
    半导体器件结构，其制造方法和使用其的像素结构

    公开(公告)号：US09252165B2

    公开(公告)日：2016-02-02

    申请号：US14184148

    申请日：2014-02-19

    Applicant: Industrial Technology Research Institute

    Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Liang-Hsiang Chen ,  Chen-Wei Lin

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L27/32

    CPC classification number: H01L27/1248 ,  H01L27/1218 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78609

    Abstract: A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

    Abstract translation: 提供半导体器件结构。 半导体器件结构可以包括衬底，半导体层，第一导电层，第二导电层，第一介电层和第二介电层。 第一介电层设置在基板上。 第二电介质层设置在第一电介质层上。 半导体层与第一介电层或第二介电层相邻。 半导体层设置在第一电介质层或第二电介质层上。 第一导电层与第一介电层或第二介电层相邻。 第二导电层设置在第一介电层或第二介电层上。 第二电介质层的有效杨氏模量可以小于第一介电层的杨氏模量。

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