公开(公告)号：US09252165B2

公开(公告)日：2016-02-02

申请号：US14184148

申请日：2014-02-19

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Liang-Hsiang Chen ,  Chen-Wei Lin

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L27/32

CPC classification number: H01L27/1248 ,  H01L27/1218 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78609

Abstract: A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Abstract translation: 提供半导体器件结构。 半导体器件结构可以包括衬底，半导体层，第一导电层，第二导电层，第一介电层和第二介电层。 第一介电层设置在基板上。 第二电介质层设置在第一电介质层上。 半导体层与第一介电层或第二介电层相邻。 半导体层设置在第一电介质层或第二电介质层上。 第一导电层与第一介电层或第二介电层相邻。 第二导电层设置在第一介电层或第二介电层上。 第二电介质层的有效杨氏模量可以小于第一介电层的杨氏模量。

公开(公告)号：US09041280B2

公开(公告)日：2015-05-26

申请号：US13753449

申请日：2013-01-29

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Chen-Wei Lin ,  Shu-Tang Yeh ,  Ping-I Shih

IPC: H01J1/62 ,  H01J63/04 ,  H05B33/22 ,  H01L51/52 ,  H01L27/32

CPC classification number: H05B33/22 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3267 ,  H01L51/5218 ,  H01L51/5234

Abstract: A double-side light emitting display panel includes a substrate, a plurality of top emission pixel structures and a plurality of bottom emission pixel structures. The top emission pixel structures are disposed on the substrate, and the bottom emission pixel structures are disposed on the substrate. The top emission pixel structures and the bottom emission pixel structures are arranged alternatively on the substrate.

Abstract translation: 双面发光显示面板包括基板，多个顶部发射像素结构和多个底部发射像素结构。 顶部发射像素结构设置在衬底上，并且底部发射像素结构设置在衬底上。 顶部发射像素结构和底部发射像素结构交替地布置在衬底上。

公开(公告)号：US09368441B2

公开(公告)日：2016-06-14

申请号：US14560101

申请日：2014-12-04

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Wu-Wei Tsai ,  Wei-Cheng Kao ,  Wei-Han Chen

IPC: H01L27/14 ,  H01L23/498 ,  H01L23/28 ,  H01L23/00 ,  H01L21/56 ,  H01L21/768

CPC classification number: H01L23/49827 ,  H01L21/56 ,  H01L21/76801 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/564 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244

Abstract: An electronic component and a method for fabricating the electronic component are provided. The electronic component includes a carrier, a first metal layer, a dielectric layer, a semiconductor layer, a flexible layer, at least one first opening, and at least one second metal layer. The first metal layer is disposed on the carrier. The dielectric layer is disposed on the first metal layer, and has a pattern consistent with a pattern of the dielectric layer. The semiconductor layer is disposed on the dielectric layer. The flexible layer is disposed on the carrier and encapsulates the first metal layer, the dielectric layer and the semiconductor layer. The flexible layer has a Young's modulus less than 40 GPa. The first opening penetrates the flexible layer. The second metal layer is disposed on the flexible layer and in the first opening and is electrically connected with the semiconductor layer.

Abstract translation: 提供了电子部件和用于制造电子部件的方法。 电子部件包括载体，第一金属层，电介质层，半导体层，柔性层，至少一个第一开口和至少一个第二金属层。 第一金属层设置在载体上。 电介质层设置在第一金属层上，并且具有与电介质层的图案一致的图案。 半导体层设置在电介质层上。 柔性层设置在载体上并封装第一金属层，电介质层和半导体层。 柔性层的杨氏模量小于40GPa。 第一个开口穿透柔性层。 第二金属层设置在柔性层和第一开口中并与半导体层电连接。

公开(公告)号：US09876193B2

公开(公告)日：2018-01-23

申请号：US14055845

申请日：2013-10-16

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chen-Yu Chiang ,  Wen-Tung Wang ,  Bo-Cheng Kung ,  Hung-Chien Lin ,  Liang-Hsiang Chen

IPC: H01L51/52 ,  H01L51/00

CPC classification number: H01L51/5256 ,  H01L51/003 ,  H01L51/0097 ,  H01L2251/55 ,  Y02E10/549 ,  Y10T428/24942

Abstract: A thin-film device may include a carrier, a release layer, a stacking structure, and a flexible substrate. The release layer may be overlaid on the carrier, and the stacking structure is overlaid on the release layer. The stacking structure may include a first protective layer and a second protective layer, wherein the refractive index of the first protective layer exceeds that of the second protective layer. The flexible substrate may be overlaid on the release layer.

公开(公告)号：US09391208B2

公开(公告)日：2016-07-12

申请号：US14517065

申请日：2014-10-17

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Wu-Wei Tsai ,  Wei-Cheng Kao ,  Wei-Han Chen

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L23/538

CPC classification number: H01L29/78606 ,  H01L23/5387 ,  H01L24/19 ,  H01L24/25 ,  H01L24/82 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/66742 ,  H01L29/78603 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/92244

Abstract: An electronic device including at least one electronic component and a method of manufacturing the same are provided. The electronic device may include a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer, and a first metal layer disposed on the insulating layer. The insulating layer may have a pattern corresponding to a pattern of the semiconductor layer or the first metal layer. The flexible layer has a Young's modulus less than 40 GPa and is disposed on the substrate to encapsulate the semiconductor layer. At least one first opening penetrates the flexible layer. At least one second metal layer is disposed on the flexible layer and in the first opening and electrically connected to the semiconductor layer.

Abstract translation: 提供了包括至少一个电子部件的电子设备及其制造方法。 电子器件可以包括衬底，设置在衬底上的半导体层，设置在半导体层上的绝缘层和设置在绝缘层上的第一金属层。 绝缘层可以具有对应于半导体层或第一金属层的图案的图案。 柔性层的杨氏模量小于40GPa，并且设置在衬底上以封装半导体层。 至少一个第一开口穿透柔性层。 至少一个第二金属层设置在柔性层上和第一开口中并电连接至半导体层。

公开(公告)号：US20160111551A1

公开(公告)日：2016-04-21

申请号：US14517065

申请日：2014-10-17

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Wu-Wei Tsai ,  Wei-Cheng Kao ,  Wei-Han Chen

IPC: H01L29/786 ,  H01L29/66 ,  H01L23/538 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L23/5387 ,  H01L24/19 ,  H01L24/25 ,  H01L24/82 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/66742 ,  H01L29/78603 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/92244

Abstract: An electronic device including at least one electronic component and a method of manufacturing the same are provided. The electronic device may include a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer, and a first metal layer disposed on the insulating layer. The insulating layer may have a pattern corresponding to a pattern of the semiconductor layer or the first metal layer. The flexible layer has a Young's modulus less than 40 GPa and is disposed on the substrate to encapsulate the semiconductor layer. At least one first opening penetrates the flexible layer. At least one second metal layer is disposed on the flexible layer and in the first opening and electrically connected to the semiconductor layer.

Abstract translation: 提供了包括至少一个电子部件的电子设备及其制造方法。 电子器件可以包括衬底，设置在衬底上的半导体层，设置在半导体层上的绝缘层和设置在绝缘层上的第一金属层。 绝缘层可以具有对应于半导体层或第一金属层的图案的图案。 柔性层的杨氏模量小于40GPa，并且设置在衬底上以封装半导体层。 至少一个第一开口穿透柔性层。 至少一个第二金属层设置在柔性层上和第一开口中并电连接至半导体层。

公开(公告)号：US20150380530A1

公开(公告)日：2015-12-31

申请号：US14848355

申请日：2015-09-09

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Hsiao-Chiang Yao ,  Chu-Yin Hung

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract translation: 半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。 第一绝缘层覆盖栅极和第一电极。 有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。 第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。 源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。 第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。

公开(公告)号：US20150348894A1

公开(公告)日：2015-12-03

申请号：US14560101

申请日：2014-12-04

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Wu-Wei Tsai ,  Wei-Cheng Kao ,  Wei-Han Chen

IPC: H01L23/498 ,  H01L21/768 ,  H01L21/56 ,  H01L23/28 ,  H01L23/00

CPC classification number: H01L23/49827 ,  H01L21/56 ,  H01L21/76801 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/564 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244

Abstract: An electronic component and a method for fabricating the electronic component are provided. The electronic component includes a carrier, a first metal layer, a dielectric layer, a semiconductor layer, a flexible layer, at least one first opening, and at least one second metal layer. The first metal layer is disposed on the carrier. The dielectric layer is disposed on the first metal layer, and has a pattern consistent with a pattern of the dielectric layer. The semiconductor layer is disposed on the dielectric layer. The flexible layer is disposed on the carrier and encapsulates the first metal layer, the dielectric layer and the semiconductor layer. The flexible layer has a Young's modulus less than 40 GPa. The first opening penetrates the flexible layer. The second metal layer is disposed on the flexible layer and in the first opening and is electrically connected with the semiconductor layer.

Abstract translation: 提供了电子部件和用于制造电子部件的方法。 电子部件包括载体，第一金属层，电介质层，半导体层，柔性层，至少一个第一开口和至少一个第二金属层。 第一金属层设置在载体上。 电介质层设置在第一金属层上，并且具有与电介质层的图案一致的图案。 半导体层设置在电介质层上。 柔性层设置在载体上并封装第一金属层，电介质层和半导体层。 柔性层的杨氏模量小于40GPa。 第一个开口穿透柔性层。 第二金属层设置在柔性层和第一开口中并与半导体层电连接。

公开(公告)号：US20140160710A1

公开(公告)日：2014-06-12

申请号：US14098551

申请日：2013-12-06

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Shu-Tang Yeh ,  Sheng-Wei Chen ,  Kuang-Jung Chen

IPC: H05K7/02 ,  H05K3/30

CPC classification number: H05K3/30 ,  G02F1/133308 ,  G02F2001/133311 ,  G02F2202/28 ,  H01L51/5246 ,  H01L51/5259 ,  Y10T29/49128

Abstract: An environmental sensitive electronic device package including a first substrate, a second substrate, an environmental sensitive electronic device, a side wall barrier structure, a first adhesive, and a second adhesive is provided. The environmental sensitive electronic device is located on the first substrate. The first adhesive is located on the first substrate. The side wall barrier structure is located on the first adhesive, and the side wall barrier structure is adhered to the first substrate through the first adhesive. The second adhesive is located on the side wall barrier structure. The side wall barrier structure is adhered to the second substrate through the second adhesive, and the side wall barrier structure, the first adhesive, and the second adhesive are located between the first substrate and the second substrate. A manufacturing method of an environmental sensitive electronic device package is also provided.

Abstract translation: 提供了包括第一基板，第二基板，环境敏感电子设备，侧壁阻挡结构，第一粘合剂和第二粘合剂的环境敏感的电子设备封装。 环境敏感电子设备位于第一基板上。 第一粘合剂位于第一基底上。 侧壁阻挡结构位于第一粘合剂上，并且侧壁阻挡结构通过第一粘合剂粘附到第一基底。 第二粘合剂位于侧壁阻挡结构上。 侧壁阻挡结构通过第二粘合剂粘附到第二基板，并且侧壁阻挡结构，第一粘合剂和第二粘合剂位于第一基板和第二基板之间。 还提供了一种环境敏感电子设备封装的制造方法。

公开(公告)号：US09553176B2

公开(公告)日：2017-01-24

申请号：US14848355

申请日：2015-09-09

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi Yan ,  Chih-Chieh Hsu ,  Hsiao-Chiang Yao ,  Chu-Yin Hung

IPC: H01L21/336 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/66765 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract translation: 半导体器件包括栅极，第一电极，第一绝缘层，有源层，蚀刻停止层，第二绝缘层，源极，漏极和第二电极。 第一绝缘层覆盖栅极和第一电极。 有源层和蚀刻停止层分别设置在栅极和第一电极上的第一绝缘层上。 第二绝缘层覆盖有源层和蚀刻停止层，并且具有暴露有源层的第一开口和第二开口以及露出蚀刻停止层的第三开口。 源极和漏极设置在第二绝缘层上，并且分别通过第一开口和第二开口与有源层接触。 第二电极位于第二绝缘层上，并通过第三开口与蚀刻停止层接触。