公开(公告)号：US20240206347A1

公开(公告)日：2024-06-20

申请号：US18081698

申请日：2022-12-15

申请人： Industrial Technology Research Institute

发明人： Ziaur Rahaman Shakh ,  Jeng-Hua Wei ,  Siddheswar Maikap

IPC分类号： H10N52/80 ,  H10B61/00 ,  H10N52/00

CPC分类号： H01L43/04 ,  H01L27/222 ,  H01L43/06

摘要： A magnetic memory structure is provided. The magnetic memory structure includes a plurality of magnetic tunneling junction (MTJ) layers, and a plurality of heavy-metal layers. The plurality of MTJ layers includes: a pinned-layer; a barrier-layer formed under the pinned-layer; and a free-layer formed under the barrier-layer. The plurality of heavy-metal layers is disposed under the free-layer.