公开(公告)号：US10930990B2

公开(公告)日：2021-02-23

申请号：US16277398

申请日：2019-02-15

Applicant: Infineon Technologies AG

Inventor： David Seebacher ,  Andrea Del Chiaro ,  Christian Schuberth ,  Peter Singerl ,  Ji Zhao

IPC: H01P3/08 ,  H01P3/16 ,  H01P5/02 ,  H01P9/00

Abstract: A device includes at least one electrically conductive structure and at least one stripline. The stripline includes stripline sections that are connected to one another in a series connection between a first terminal and a second terminal. A first subset of the stripline sections is arranged on a first side of the conductive structure and a second subset of the stripline sections is arranged on a second side of the conductive structure. The device also includes at least one conductive connection between the first subset of the stripline sections and the second subset of the stripline sections, wherein the at least one conductive connection is isolated from the at least one electrically conductive structure.

公开(公告)号：US20190280360A1

公开(公告)日：2019-09-12

申请号：US16277398

申请日：2019-02-15

Applicant: Infineon Technologies AG

Inventor： David Seebacher ,  Andrea Del Chiaro ,  Christian Schuberth ,  Peter Singerl ,  Ji Zhao

IPC: H01P3/08 ,  H01P3/16

Abstract: A device includes at least one electrically conductive structure and at least one stripline. The stripline includes stripline sections that are connected to one another in a series connection between a first terminal and a second terminal. A first subset of the stripline sections is arranged on a first side of the conductive structure and a second subset of the stripline sections is arranged on a second side of the conductive structure. The device also includes at least one conductive connection between the first subset of the stripline sections and the second subset of the stripline sections, wherein the at least one conductive connection is isolated from the at least one electrically conductive structure.

公开(公告)号：US10763228B2

公开(公告)日：2020-09-01

申请号：US16229379

申请日：2018-12-21

Applicant: Infineon Technologies AG

Inventor： David Seebacher ,  Andrea Del Chiaro ,  Peter Singerl ,  Ji Zhao

IPC: H03F3/16 ,  H01L23/66 ,  H03F3/217 ,  H03F1/34 ,  H03F3/195 ,  H03F1/08 ,  H01L23/00

Abstract: Devices including a transistor having a parasitic capacitance between a control terminal and a load terminal of a first type are provided. Furthermore, the devices include advantageously arranged inductances which are electromagnetically coupled to one another and are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.

公开(公告)号：US20190198465A1

公开(公告)日：2019-06-27

申请号：US16229379

申请日：2018-12-21

Applicant: Infineon Technologies AG

Inventor： David Seebacher ,  Andrea Del Chiaro ,  Peter Singerl ,  Ji Zhao

IPC: H01L23/66 ,  H03F3/217 ,  H03F3/195 ,  H03F1/34

Abstract: Devices including a transistor having a parasitic capacitance between a control terminal and a load terminal of a first type are provided. Furthermore, the devices include advantageously arranged inductances which are electromagnetically coupled to one another and are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.