公开(公告)号：US20150103452A1

公开(公告)日：2015-04-16

申请号：US14574955

申请日：2014-12-18

Applicant: Infineon Technologies AG

Inventor： Christian Russ ,  Werner Hoellinger ,  Bernhard Stein

IPC: H02H9/04

CPC classification number: H02H9/046

Abstract: Various embodiments described below relate to an ESD protection device that includes a voltage controlled shunt (e.g., a transistor) to selectively shunt energy of an incoming ESD pulse away from a circuit that includes a semiconductor device to be protected. In some embodiments, the ESD protection device includes a power up detection element to determine whether the circuit has powered up. If the circuit is powered up, the power up detection element prevents inadvertent triggering of the ESD protection device.

Abstract translation: 下面描述的各种实施例涉及ESD保护装置，其包括电压控制分流器（例如，晶体管），以便选择性地将输入的ESD脉冲的能量远离包括待保护的半导体器件的电路分流。 在一些实施例中，ESD保护装置包括用于确定电路是否通电的上电检测元件。 如果电路通电，则上电检测元件可防止ESD保护器件的意外触发。

公开(公告)号：US20240332954A1

公开(公告)日：2024-10-03

申请号：US18191528

申请日：2023-03-28

Applicant: Infineon Technologies AG

Inventor： Christian Cornelius Russ ,  Gabriel-Dumitru Cretu ,  Filippo Magrini ,  Bernhard Stein ,  Eric Pihet

IPC: H02H9/00 ,  H02H9/04

CPC classification number: H02H9/005 ,  H02H9/04

Abstract: An ESD protection circuit includes a silicon controlled rectifier (SCR) including a first conduction path between a first node and a second node and a clamp circuit coupled to a control terminal of the SCR. The clamp circuit is part of a second conduction path between the first node and the second node. During an ESD event, the clamp circuit conduct an ESD current until a threshold IV point is reached. The clamp circuit triggers the SCR, which then acts as a snapback device to conduct the ESD current at a lower voltage.