公开(公告)号：US20210193560A1

公开(公告)日：2021-06-24

申请号：US16718443

申请日：2019-12-18

Applicant: Infineon Technologies AG

Inventor： Stuart Cardwell ,  Chee Yang Ng ,  Josef Maerz ,  Clive O'Dell ,  Mark Pavier

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/522

Abstract: A semiconductor device includes a conductive frame comprising a die attach surface that is substantially planar, a semiconductor die comprising a first load on a rear surface and a second terminal disposed on a main surface, a first conductive contact structure disposed on the die attach surface, and a second conductive contact structure on the main surface. The first conductive contact structure vertically extends past a plane of the main surface of the semiconductor die. The first conductive contact structure is electrically isolated from the main surface of the semiconductor die by an electrical isolation structure. An upper surface of the electrical isolation structure is below the main surface of the semiconductor die.