公开(公告)号：US20220369042A1

公开(公告)日：2022-11-17

申请号：US17660239

申请日：2022-04-22

Applicant: Infineon Technologies AG

Inventor： Paul Westmarland ,  Bernd Goller ,  Scott Palmer ,  Mark Pavier

IPC: H04R19/04 ,  H04R7/18 ,  H04R7/06

Abstract: A sound transducer device includes a multilayer component board having a first side and an opposite second side, and a sound port extending between the first and second sides of the multilayer component board. The sound transducer also includes a MEMS sound transducer die including a suspended membrane structure, wherein the MEMS sound transducer die is arranged at the first side of the multilayer component board such that the suspended membrane structure is in fluid communication with the sound port. The sound transducer also includes a mesh structure for providing an environmental barrier, the mesh structure covering the sound port from either one of the first and second sides of the multilayer component board.

公开(公告)号：US20210175200A1

公开(公告)日：2021-06-10

申请号：US17110755

申请日：2020-12-03

Applicant: Infineon Technologies AG

Inventor： Mark Pavier

IPC: H01L23/00

Abstract: A semiconductor device includes a first carrier, a first external contact, a second external contact, and a first semiconductor die. The first semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The first semiconductor die is disposed with the first main face on the first carrier. A clip connects the second contact pad and the second external contact. A first wire is connected with the first external contact. The first wire is disposed at least partially under the clip.

公开(公告)号：US10074590B1

公开(公告)日：2018-09-11

申请号：US15649459

申请日：2017-07-13

Applicant: Infineon Technologies AG

Inventor： Mark Pavier ,  Wolfram Hable ,  Angela Kessler ,  Michael Sielaff ,  Anton Pugatschow ,  Charles Rimbert-Riviere ,  Marco Sobkowiak

IPC: H01L23/498 ,  H01L23/373 ,  H01L23/31 ,  H01L23/50 ,  H01L23/00 ,  H01L23/29 ,  H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  B60R16/02

CPC classification number: H01L23/3735 ,  B60R16/02 ,  H01L21/4807 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/15 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49541 ,  H01L23/49555 ,  H01L23/49861 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L25/18 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/48139 ,  H01L2224/48175 ,  H01L2224/4846 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/14252 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2224/43848

Abstract: A package which comprises a chip carrier, at least one electronic chip mounted on the chip carrier, an electrically conductive contact structure electrically coupled with the at least one electronic chip, and a mold-type encapsulant encapsulating part of the electrically conductive contact structure, and at least part of the chip carrier and of the at least one electronic chip, wherein the chip carrier comprises a thermally conductive and electrically insulating core covered on both opposing main surfaces thereof by a respective brazed electrically conductive layer.

公开(公告)号：US12063474B2

公开(公告)日：2024-08-13

申请号：US17660239

申请日：2022-04-22

Applicant: Infineon Technologies AG

Inventor： Paul Westmarland ,  Bernd Goller ,  Scott Palmer ,  Mark Pavier

IPC: H04R19/04 ,  H04R7/06 ,  H04R7/18

CPC classification number: H04R19/04 ,  H04R7/06 ,  H04R7/18 ,  H04R2201/003 ,  H04R2307/025

Abstract: A sound transducer device includes a multilayer component board having a first side and an opposite second side, and a sound port extending between the first and second sides of the multilayer component board. The sound transducer also includes a MEMS sound transducer die including a suspended membrane structure, wherein the MEMS sound transducer die is arranged at the first side of the multilayer component board such that the suspended membrane structure is in fluid communication with the sound port. The sound transducer also includes a mesh structure for providing an environmental barrier, the mesh structure covering the sound port from either one of the first and second sides of the multilayer component board.

公开(公告)号：US11609180B2

公开(公告)日：2023-03-21

申请号：US16951365

申请日：2020-11-18

Applicant: Infineon Technologies AG

Inventor： Siyuan Qi ,  Joachim Eder ,  Christoph Glacer ,  Dominic Maier ,  Mark Pavier

IPC: G01N21/17 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00

Abstract: The present disclosure concerns an emitter package for a photoacoustic sensor, the emitter package comprising a MEMS infrared radiation source for emitting pulsed infrared radiation in a first wavelength range. The MEMS infrared radiation source may be arranged on a substrate. The emitter package may further comprise a rigid wall structure being arranged on the substrate and laterally surrounding a periphery of the MEMS infrared radiation source. The emitter package may further comprise a lid structure being attached to the rigid wall structure, the lid structure comprising a filter structure for filtering the infrared radiation emitted from the MEMS infrared radiation source and for providing a filtered infrared radiation in a reduced second wavelength range.

公开(公告)号：US20220139811A1

公开(公告)日：2022-05-05

申请号：US17086976

申请日：2020-11-02

Applicant: Infineon Technologies AG

Inventor： Azlina Kassim ,  Thai Kee Gan ,  Mark Pavier ,  Ke Yan Tean ,  Mohd Hasrul Zulkifli

IPC: H01L23/495 ,  H01L23/31

Abstract: An interconnect clip includes a die attach pad that comp includes rises a die attach surface at an inner side of the interconnect clip, a heat dissipation pad that includes a heat dissipation surface at an outer side of the interconnect clip, and a lead contact pad that includes a lead contact surface at an inner side of the interconnect clip or at an outer side of the interconnect clip. The outer side of the interconnect clip in the lead contact pad faces and is spaced apart from the inner side of the interconnect clip in the heat dissipation pad, and the inner side of the interconnect clip in the lead contact pad faces and is spaced apart from the outer side of the interconnect clip in the die attach pad.

公开(公告)号：US10283432B2

公开(公告)日：2019-05-07

申请号：US16111606

申请日：2018-08-24

Applicant: Infineon Technologies AG

Inventor： Mark Pavier ,  Wolfram Hable ,  Angela Kessler ,  Michael Sielaff ,  Anton Pugatschow ,  Charles Rimbert-Riviere ,  Marco Sobkowiak

IPC: H01L21/48 ,  H01L23/373 ,  B60R16/02 ,  H01L21/56 ,  H01L25/18 ,  H01L23/29 ,  H01L23/00 ,  H01L23/498 ,  H01L23/50 ,  H01L23/31

Abstract: A method of manufacturing a package, wherein the method comprises a forming a chip carrier by covering a thermally conductive and electrically insulating core on both opposing main surfaces thereof at least partially by a respective electrically conductive layer by brazing the respective electrically conductive layer on a respective one of the main surfaces; a mounting at least one electronic chip on the chip carrier; an electrically coupling an electrically conductive contact structure with the at least one electronic chip; and an encapsulating part of the electrically conductive contact structure, and at least part of the chip carrier and of the at least one electronic chip by a mold-type encapsulant.

公开(公告)号：US20240404983A1

公开(公告)日：2024-12-05

申请号：US18800474

申请日：2024-08-12

Applicant: Infineon Technologies AG

Inventor： Mark Pavier

IPC: H01L23/00

Abstract: A method for fabricating a semiconductor device includes: providing a carrier; providing first and second external contacts; providing a semiconductor die including a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, and a vertical transistor; disposing the semiconductor die with the first main face onto the carrier; connecting a wire with the second external contact; and connecting a clip between the second contact pad and the first external contact. Connecting the wire is carried out before connecting the clip.

公开(公告)号：US20240288363A1

公开(公告)日：2024-08-29

申请号：US18582173

申请日：2024-02-20

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Ulrich Krumbein ,  Tobias Mittereder ,  Mark Pavier ,  Siyuan Qi ,  Hugh Richard ,  David Tumpold ,  Paul Westmarland

IPC: G01N21/3504

CPC classification number: G01N21/3504

Abstract: A package for an optical radiation device comprises a base structure having arranged thereon an optical radiation device, an optically transparent lid element bonded to the base structure defining a cavity between the base structure and the lid element, and a bond structure in a bonding region between the base structure and the lid element, wherein the bond structure is arranged to provide an adhesive bond between the base structure and the lid element, and wherein the bond structure comprises a diffusion layer having a gas diffusive material or gas diffusive structure for providing a gas diffusion path between the cavity and the surrounding atmosphere.

公开(公告)号：US20240202485A1

公开(公告)日：2024-06-20

申请号：US18524353

申请日：2023-11-30

Applicant: Infineon Technologies AG

Inventor： Frank Püschner ,  Mark Pavier ,  Bernd Ebersberger

IPC: G06K19/077 ,  G06K19/07 ,  G06V40/13

CPC classification number: G06K19/07756 ,  G06K19/0718 ,  G06K19/07775 ,  G06V40/1306

Abstract: A wafer-level package sensor device including a capacitive sensor, a controller which is electrically conductively connected to the sensor, wherein the capacitive sensor is formed by partially overlapping redistribution layer tracks of the wafer-level package sensor device formed in different planes, and multiple contact surfaces connected to the controller, which are configured to electrically couple to a chip card module carrier using a flip-chip connection.