公开(公告)号：US20210119006A1

公开(公告)日：2021-04-22

申请号：US17072602

申请日：2020-10-16

Applicant: Infineon Technologies AG

Inventor： Thomas AICHINGER ,  Wolfgang BERGNER ,  Ralf SIEMIENIEC ,  Frank WOLTER

IPC: H01L29/43 ,  H01L29/10 ,  H01L29/423 ,  H01L29/16

Abstract: In an example, a transistor device is provided. The transistor device includes a plurality of transistor cells each including a gate electrode and each at least partially integrated in a semiconductor body that includes a wide bandgap semiconductor material. The transistor device includes a gate pad arranged on top of the semiconductor body, and a plurality of gate runners each arranged on top of the semiconductor body and each connected to gate electrodes of at least some of the plurality of transistor cells. Each gate runner of the plurality of gate runners has a longitudinal direction, and at least one of the gate runners includes at least a section in which a resistivity per area increases in the longitudinal direction as a distance to the gate pad along the gate runner increases.