公开(公告)号：US20170316934A1

公开(公告)日：2017-11-02

申请号：US15141855

申请日：2016-04-29

Applicant: Infineon Technologies AG

Inventor： Evelyn NAPETSCHNIG ,  Sandra WIRTITSCH ,  Mario BARUSIC ,  Aleksander HINZ ,  Robert HARTL ,  Georg SCHINNER

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/306 ,  H01L21/225 ,  H01L29/167

CPC classification number: H01L21/02068 ,  H01L21/02082 ,  H01L21/0209 ,  H01L21/221 ,  H01L21/2251 ,  H01L21/30604 ,  H01L21/3247 ,  H01L29/167

Abstract: According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.