公开(公告)号：US09230885B2

公开(公告)日：2016-01-05

申请号：US14060641

申请日：2013-10-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Gerald Dallmann ,  Alfred Vater

IPC: H01L21/44 ,  H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/48 ,  H01L21/768 ,  H01L21/76831 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer.