公开(公告)号：US20240210467A1

公开(公告)日：2024-06-27

申请号：US18394821

申请日：2023-12-22

Applicant: Infineon Technologies AG

Inventor： Till Schloesser ,  Axel Reithofer ,  Jens Berrenscheen

IPC: G01R31/28

CPC classification number: G01R31/2884 ,  G01R31/2834 ,  H01L29/402

Abstract: One exemplary embodiment relates to a circuit which is integrated into a semiconductor substrate and which comprises a lateral field effect transistor having a drift region and a field plate electrode, which is isolated from the drift region by an isolation zone. The integrated circuit further comprises a first terminal, which is coupled to the field plate electrode, for applying a test voltage to the field plate electrode in a test operating mode. An electronic switch is configured to connect the field plate electrode to a circuit node that is at a reference voltage in a normal operating mode of the integrated circuit. The integrated circuit further comprises a second terminal, which is connected to a control terminal of the electronic switch and is configured to receive a control signal for switching on or off the electronic switch.