公开(公告)号：US20240007084A1

公开(公告)日：2024-01-04

申请号：US17810163

申请日：2022-06-30

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Manuel Wilke ,  Benjamin Schmidt ,  Jonas Groenvall

IPC: H03K3/011 ,  H03K17/687

CPC classification number: H03K3/011 ,  H03K17/6871

Abstract: This disclosure is directed to a dual gate metal oxide semiconductor field effect transistor (MOSFET) device formed in a semiconductor material, as well as circuits and techniques for using the dual gate MOSFET device. In some examples, the dual gate MOSFET device may comprise a first MOSFET formed in the semiconductor material, and a second MOSFET formed in the semiconductor material, wherein the first MOSFET and the second MOSFET are arranged in parallel in the semiconductor material, wherein the first MOSFET and the second MOSFET include a common drain node and a common source node, and wherein the first MOSFET and the second MOSFET define different transfer characteristics.

公开(公告)号：US11955974B2

公开(公告)日：2024-04-09

申请号：US17810163

申请日：2022-06-30

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Manuel Wilke ,  Benjamin Schmidt ,  Jonas Groenvall

IPC: H03K3/011 ,  H03K17/687

CPC classification number: H03K3/011 ,  H03K17/6871

Abstract: This disclosure is directed to a dual gate metal oxide semiconductor field effect transistor (MOSFET) device formed in a semiconductor material, as well as circuits and techniques for using the dual gate MOSFET device. In some examples, the dual gate MOSFET device may comprise a first MOSFET formed in the semiconductor material, and a second MOSFET formed in the semiconductor material, wherein the first MOSFET and the second MOSFET are arranged in parallel in the semiconductor material, wherein the first MOSFET and the second MOSFET include a common drain node and a common source node, and wherein the first MOSFET and the second MOSFET define different transfer characteristics.