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公开(公告)号:US20240363700A1
公开(公告)日:2024-10-31
申请号:US18140782
申请日:2023-04-28
Applicant: Infineon Technologies AG
Inventor: Lars Mueller-Meskamp , Ralf Rudolf , Anton Mauder , Annett Winzer , Dirk Priefert , Christian Schippel , Thomas Kuenzig
CPC classification number: H01L29/407 , H01L29/404 , H01L29/7816
Abstract: A semiconductor device includes: a silicon layer having an electrically insulated backside and a thickness in a range of 10 μm to 200 μm between a frontside of the silicon layer and the electrically insulated backside; a high voltage region and a low voltage region formed in the silicon layer and laterally spaced apart from one another; and a first field plate structure extending from the frontside into the silicon layer. The first field plate structure includes a field plate laterally separated from the silicon layer by a dielectric material and/or a pn junction.