METHOD FOR FORMING A POWER SEMICONDUCTOR MODULE ARRANGEMENT

    公开(公告)号:US20240162048A1

    公开(公告)日:2024-05-16

    申请号:US18505558

    申请日:2023-11-09

    CPC classification number: H01L21/4846 H01L23/49811 H01L25/072

    Abstract: A method includes exerting a pressing force on a section of a first surface of a metal layer by a punch. Either the metal layer is arranged on a working surface with a second surface of the metal layer facing the working surface, the second surface being arranged opposite the first surface, and the punch is pressed against the section of the first surface with a pressing force that forces material of the metal layer to flow up against a stroke of the punch, thereby forming a sleeve extending from the first surface in a vertical direction and away from the second surface, or the punch is pressed against the section of the first surface and forced through the metal layer towards the second surface with a pressing force that forces material of the metal layer to flow down with a stroke of the punch, thereby forming a sleeve extending from the second surface in a vertical direction and away from the first surface. The method further includes, after forming the sleeve, arranging the metal layer in a housing of a power semiconductor module.

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