公开(公告)号：US10424636B2

公开(公告)日：2019-09-24

申请号：US15386077

申请日：2016-12-21

Applicant: Infineon Technologies AG

Inventor： Andreas Haertl ,  Martin Brandt ,  Andre Rainer Stegner ,  Martin Stutzmann

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/861 ,  H01L29/78 ,  H01L29/417

Abstract: A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.