公开(公告)号：US20230275577A1

公开(公告)日：2023-08-31

申请号：US18167361

申请日：2023-02-10

Applicant: Infineon Technologies AG

Inventor： Massimo GRASSO ,  Daniele MIATTON

IPC: H03K17/082

CPC classification number: H03K17/082

Abstract: A transistor device is provided including a first device load terminal, a second device load terminal and a device control terminal. The device includes a transistor. A first transistor load terminal is coupled to the first device load terminal, a second transistor load terminal is coupled to a second device load terminal, and a transistor control terminal is coupled to the device control terminal via a variable impedance element. An overload detection circuit switches the variable impedance element from a first state with lower impedance to a second state with higher impedance in response to detecting an overload condition.

公开(公告)号：US20230223472A1

公开(公告)日：2023-07-13

申请号：US18152550

申请日：2023-01-10

Applicant: Infineon Technologies AG

Inventor： Anton MAUDER ,  Stefano RUZZA ,  Massimo GRASSO ,  Richard KUCHCINSKI ,  Daniel DOMES

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/7815 ,  H01L29/0696

Abstract: A semiconductor assembly includes a semiconductor switching device, a conductive load base structure, and a current sense unit. The semiconductor switching device includes a drain structure and one or more array units, wherein each array unit includes a load pad and a plurality of transistor cells electrically connected in parallel between the load pad of the array unit and the drain structure. The current sense unit is electrically connected between a first one of the load pads and the load base structure.