公开(公告)号：US20220199464A1

公开(公告)日：2022-06-23

申请号：US17128866

申请日：2020-12-21

Applicant: Infineon Technologies AG

Inventor： Stephan VOSS ,  Alexander BREYMESSER ,  Eva-Maria HOF ,  Mathias PLAPPERT ,  Carsten SCHAEFFER

IPC: H01L21/768 ,  H01L23/52 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a metallic layer may be formed over a semiconductor substrate. An anti-reflective layer may be formed over the metallic layer. A passivation layer may be formed over the anti-reflective layer. An opening may be formed in the passivation layer to expose the anti-reflective layer.