公开(公告)号：US20220199464A1

公开(公告)日：2022-06-23

申请号：US17128866

申请日：2020-12-21

Applicant: Infineon Technologies AG

Inventor： Stephan VOSS ,  Alexander BREYMESSER ,  Eva-Maria HOF ,  Mathias PLAPPERT ,  Carsten SCHAEFFER

IPC: H01L21/768 ,  H01L23/52 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a metallic layer may be formed over a semiconductor substrate. An anti-reflective layer may be formed over the metallic layer. A passivation layer may be formed over the anti-reflective layer. An opening may be formed in the passivation layer to expose the anti-reflective layer.

公开(公告)号：US20210159115A1

公开(公告)日：2021-05-27

申请号：US17104559

申请日：2020-11-25

Applicant: Infineon Technologies AG

Inventor： Werner SCHUSTEREDER ,  Alexander BREYMESSER ,  Mihai DRAGHICI ,  Tobias Franz Wolfgang HOECHBAUER ,  Wolfgang LEHNERT ,  Hans-Joachim SCHULZE ,  Marko David SWOBODA

IPC: H01L21/762 ,  H01L21/3115 ,  H01L21/265 ,  H01L21/768

Abstract: Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.