公开(公告)号：US20250102422A1

公开(公告)日：2025-03-27

申请号：US18830121

申请日：2024-09-10

Applicant: Infineon Technologies AG

Inventor： Michael Hauff ,  David Tumpold ,  Tobias Mittereder ,  Mohammadamir Ghaderi ,  Stefan Hampl ,  Alfred Sigl ,  Sebastian Schwagerl

IPC: G01N21/17 ,  H01L31/12

Abstract: In accordance with an embodiment, a semiconductor device includes: a radiator comprising a radiation layer configured to radiate an electromagnetic wave; a detector comprising a detection layer configured to detect the electromagnetic wave; a substrate; and an interface layer arranged between the radiator or the detector and the substrate, where a thermal conductivity of the radiator or the detector is different from a thermal conductivity of the interface layer.