公开(公告)号：US11152321B2

公开(公告)日：2021-10-19

申请号：US16784751

申请日：2020-02-07

Applicant: Infineon Technologies AG

Inventor： Carlo Marbella ,  Swee Guan Chan ,  Eung San Cho ,  Navas Khan Oratti Kalandar

IPC: H01L23/00 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.

公开(公告)号：US20200258855A1

公开(公告)日：2020-08-13

申请号：US16784751

申请日：2020-02-07

Applicant: Infineon Technologies AG

Inventor： Carlo Marbella ,  Swee Guan Chan ,  Eung San Cho ,  Navas Khan Oratti Kalandar

IPC: H01L23/00 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.