公开(公告)号：US11152321B2

公开(公告)日：2021-10-19

申请号：US16784751

申请日：2020-02-07

Applicant: Infineon Technologies AG

Inventor： Carlo Marbella ,  Swee Guan Chan ,  Eung San Cho ,  Navas Khan Oratti Kalandar

IPC: H01L23/00 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.

公开(公告)号：US20200258855A1

公开(公告)日：2020-08-13

申请号：US16784751

申请日：2020-02-07

Applicant: Infineon Technologies AG

Inventor： Carlo Marbella ,  Swee Guan Chan ,  Eung San Cho ,  Navas Khan Oratti Kalandar

IPC: H01L23/00 ,  H01L21/027

Abstract: A method of manufacturing a semiconductor device is described. The method includes depositing a photoresist layer over a semiconductor substrate. The photoresist layer is patterned to form an opening in the photoresist layer. A copper pillar is formed in the opening. A diffusion barrier layer is formed over the copper pillar and over a photoresist portion of the photoresist layer directly adjoining the opening. A solder structure is deposited over the diffusion barrier layer.

公开(公告)号：US20140339690A1

公开(公告)日：2014-11-20

申请号：US13897620

申请日：2013-05-20

Applicant: Infineon Technologies AG

Inventor： Swee Guan Chan ,  Kong Yang Leong ,  Mei Yong Wang ,  Heinrich Koerner

IPC: H01L23/00

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/49 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10162 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/206

Abstract: An integrated-circuit module includes an integrated-circuit device having a first surface and a plurality of bond pads disposed on the first surface. The module further includes metallic bond wires or metallic ribbons, which are attached between respective ones of a first subset of the bond pads and a package substrate or leadframe, such that a second subset of the bond pads are not attached to either a package substrate or leadframe. A metallic stud bump is affixed to each of one or more of the second subset of the bond pads. The integrated-circuit module further comprises a molding compound that contacts at least the first surface of the integrated-circuit device and substantially surrounds the bond wires or ribbon wires and the metallic stud bumps.

Abstract translation: 集成电路模块包括具有第一表面和设置在第一表面上的多个接合焊盘的集成电路器件。 模块还包括金属接合线或金属带，其附接在接合焊盘的第一子集中的相应的一个和封装衬底或引线框之间，使得接合焊盘的第二子集不附接到封装衬底或 引线框架 金属柱头凸块固定到接合垫的第二子集中的一个或多个中的每一个上。 集成电路模块还包括模制化合物，该模制化合物至少与集成电路器件的第一表面接触并且基本上围绕结合线或带状线以及金属柱状凸块。