公开(公告)号：US20240006218A1

公开(公告)日：2024-01-04

申请号：US18211656

申请日：2023-06-20

Applicant: Infineon Technologies AG

Inventor： Gregor Langer ,  Bernhard Goller ,  Nilesha Mishra ,  Matteo Piccin ,  Franz-Josef Pichler

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/304

CPC classification number: H01L21/6835 ,  H01L22/14 ,  H01L21/3043 ,  H01L2221/68318 ,  H01L2221/68381

Abstract: A method of manufacturing a semiconductor device in a semiconductor body is proposed. The method includes processing a semiconductor body at a first surface of the semiconductor body. The method further includes attaching the semiconductor body to a carrier via the first surface. The carrier includes an inner part and an outer part at least partly surrounding the inner part. The method further includes processing the semiconductor body at a second surface opposite to the first surface. The method further includes detaching the inner part of the carrier from the semiconductor body.